Cu-TiN nano composite film based on magnetron sputtering codeposition technology

Abstract

A Cu-TiN nano composite film based on a magnetron sputtering codeposition technology relates to the technical fields of micro-electrons and micromechanics, has a nanometer size, and has TiN additive particles and Cu crystal grains, which are uniformly mixed. The content of the TiN additive particles is 1.0-6.0 at.%. The composite film prepared by the invention is 4.1-5.1GPa in thickness and 3-25 micro-omega cm at electrical resistivity. When the additive contents (referred to alloy element content as for a Cu-based alloy film and referred to the content of added compounds as for a Cu-based composite film) are equal, the hardness of the composite film is obviously higher than that of the Cu-based alloy film adopted in industrial production at present, and the electrical conductivity is not lower than but much higher than that of the alloy film in most cases. The film can meet the high-hardness requirements of modern industry, in particular the technical fields of micro-electrons and micromechanics, on the conductive film.

Description

technical field [0001] The invention relates to a composite material in the technical fields of microelectronics and micromechanics, in particular to a Cu-TiN nanocomposite film with a hardness of more than 4.1 Gpa and a resistivity of less than 25 μΩcm. Background technique [0002] Vapor-deposited Cu thin film is an important surface engineering material. Its excellent electrical conductivity and toughness have been widely used in surface engineering. With the development of high technology such as microelectronics and micromechanics, Cu thin film is required to maintain its high conductivity It has high hardness and high toughness at the same time, but the Cu film obtained by the prior art has low hardness, which limits the application range of this type of film. In order to improve the hardness of the Cu film, the existing technology is to add various alloy elements to Cu to form an alloy film. Although the method of alloying can improve the hardness of the Cu film, the ...

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Problems solved by technology

[0003] After searching the prior art and documents, it is found that by K.Barmak, A.Gungor, C.Cabral Jr. and J.M.E.Harper in Journal of Applied Physics, 2003; 94(3):1605 titled Annealing behavior of Cu and dilute Cu‐alloy films: Precipitation, grain growth, and resistivity documents provide Ag, Al, Sn, Ti, Nb and other elements added to Cu to form alloy films. In these Cu-based alloy films, the resistance of most films The resistivity will increase significantly with the addition of a small amount of alloy content (such as <3at.%). Only a small amount of high-conductivity elements Ag and Al have a small increase in the resistivity of the Cu alloy film, but each alloy element including Ag and Al When the content is low, the hardness of the film is not significantly improved

[0004] In fact, no matter what kind of alloying elements are added to the Cu film to form a solid solution film, there is a problem that the hardness does not increase much at low alloy content, but the electrical conductivity decreases significantly at high alloy content.

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