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Method for realizing stable GaAs deep ultraviolet graphic photoetching technology

A technology of deep ultraviolet and pattern light, applied in microlithography exposure equipment, photolithography process exposure devices, etc., can solve the problem of incompatibility of focal plane parameters of gallium arsenide wafers, and achieve a simple and reliable method and improve stability. Effect

Inactive Publication Date: 2015-01-28
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology

[0005] The present invention proposes a method for realizing a stable GaAs deep-ultraviolet pattern lithography process through a scanning lithography machine, and its purpose is to solve the problem of focal plane parameter incompatibility caused by the difference between the gallium arsenide wafer and the silicon wafer surface question

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Embodiment Construction

[0019] A method for realizing a stable GaAs deep ultraviolet pattern photolithography process through a scanning photolithography machine, comprising the following steps:

[0020] 1) Calibrate the focal plane parameters of the scanning lithography machine with the Si wafer;

[0021] 2) A layer of dielectric is grown on the surface of the GaAs epitaxial wafer;

[0022] 3) Calibrate the focal plane parameters of the scanning lithography machine on the GaAs epitaxial wafer of the growth medium;

[0023] 4) Surface treatment of GaAs wafer;

[0024] 5) Use the surface-treated GaAs wafer to coat the glue, expose the deep ultraviolet pattern, and develop.

[0025] The lithography machine described above is a scanning lithography machine. The topography and optical characteristics of the wafer seriously affect the lithography results of the lithography machine. The scanning lithography machine is mainly used for pattern lithography with a line width below 150nm.

[0026] The line w...

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Abstract

The invention discloses a method for realizing a stable GaAs deep ultraviolet graphic photoetching technology by a scanning type photoetching machine. The method comprises the steps of (1) calibrating focal plane parameters of the scanning type photoetching machine by a Si sheet; (2) growing a layer of medium on the surface of a GaAs epitaxial slice; (3) calibrating the focal plane parameters of the scanning type photoetching machine by the GaAs epitaxial slice on which the medium grows; (4) performing surface treatment on a GaAs wafer; and (5) coating the GaAs wafer subjected to surface treatment with glue, and exposing a deep ultraviolet graph for developing. The method has the advantages that the focal plane of the scanning type photoetching machine is calibrated by the standard silicon sheet, so that the ideal state of the design is achieved, and the surface optical characteristic of the epitaxial slice and the shape and the appearance of the surface of the epitaxial slice can be improved; therefore, the GaAs wafer can obtain the stable focal plane parameters on the photoetching machine, and the photoetching machine can achieve an ideal GaAs DUV exposure state; meanwhile, before the GaAs wafer DUV exposure, the GaAs DUV photoetching shape and appearance can be effectively improved by performing the surface treatment on the wafer.

Description

technical field [0001] The invention relates to a method for realizing a stable GaAs deep-ultraviolet pattern lithography process through a scanning lithography machine, and belongs to the technical field of GaAs deep-ultraviolet pattern lithography. Background technique [0002] GaAs microwave monolithic integrated circuit (MMIC) has the advantages of high reliability, low cost, small size, and highly consistent parameters. GaAs-based transmission and reception modules, mixers, amplifiers and other circuits have been widely used in radio frequency communications and microwave Communication circuit system. Due to the higher and higher requirements for device operating frequency and data processing speed, correspondingly higher requirements are put forward for the GaAs process. At present, the GaAs lithography process of 150nm and below mainly relies on electron beam exposure, which cannot meet the needs of mass production. Therefore, there is an urgent need to develop a Ga...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 蔡利康彭劲松高建峰
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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