Perovskite type solar cell with sputtering ZnO as electron transfer layer and preparation

An electron transport layer and solar cell technology, applied in the field of solar cells, can solve problems such as complex processes, and achieve the effects of high electron transport capacity, high photoelectric conversion efficiency, and easy fabrication

Inactive Publication Date: 2015-01-28
昆山惟华光能有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this TiO 2 The electron transport layer structure requires a two-layer structure, one layer is dense TiO 2 layer, a layer of mesoporous TiO 2 layer, and both need to be sintered at a temperature as high as 500°C. The thickness of the two layers is more than 300nm, and the process is relatively complicated.

Method used

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  • Perovskite type solar cell with sputtering ZnO as electron transfer layer and preparation

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Embodiment 1

[0033] A perovskite type solar cell with sputtered ZnO as the electron transport layer, such as figure 1 As shown, it is composed of a transparent conductive glass substrate 1, an electron transport layer 2, a perovskite-type material layer 3, a hole transport layer 4 and an Au / Ag metal back electrode layer 5 and constitutes a laminated structure in sequence. The transparent conductive The glass substrate 1 is ITO conductive glass; the electron transport layer 2 is a sputtered ZnO film with a thickness of 40 nm; the perovskite material layer 3 is CH 3 NH 3 PbI 3 Layer with a thickness of 300nm; hole transport layer 4 is 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene ( The spiro-MeOTAD) layer has a thickness of 40 nm; the metal back electrode layer 5 is Ag with a thickness of 100 nm.

Embodiment 2

[0035] A perovskite type solar cell with sputtered ZnO as the electron transport layer, which is composed of a transparent conductive glass substrate, an electron transport layer, a perovskite type material layer, a hole transport layer and an Au / Ag metal back electrode layer. The laminated structure is formed in sequence, the transparent conductive glass substrate is ITO conductive glass; the electron transport layer is a sputtered ZnO film with a thickness of 20nm; the perovskite-type material layer is CH 3 NH 3 PbI 3 Layer with a thickness of 300nm; the hole transport layer is 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro -MeOTAD) layer with a thickness of 40nm; the metal back electrode layer is Ag with a thickness of 60nm.

Embodiment 3

[0037] A perovskite type solar cell with sputtered ZnO as the electron transport layer, which is composed of a transparent conductive glass substrate, an electron transport layer, a perovskite type material layer, a hole transport layer and an Au / Ag metal back electrode layer. The laminated structure is formed in sequence, the transparent conductive glass substrate is ITO conductive glass; the electron transport layer is a sputtered ZnO film with a thickness of 120 nm; the perovskite-type material layer is CH 3 NH 3 PbI 3 Layer with a thickness of 300nm; the hole transport layer is 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro -MeOTAD) layer with a thickness of 40nm; the metal back electrode layer is Au with a thickness of 60nm.

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Abstract

The invention provides a perovskite type solar cell with sputtering ZnO as an electron transfer layer and preparation and relates to solar cells. The perovskite type solar cell is provided with a transparent conducting glass substrate, the ZnO electron transfer layer, a perovskite type material layer, a hole transfer layer and a metal back electrode layer from bottom to top in sequence. The preparation comprises the steps that the transparent conducting glass substrate is preprocessed, a ZnO thin film is prepared on the transparent conducting glass substrate, and heating and annealing are conducted, in other words, the ZnO electron transfer layer is sputtered; a DMF solution of PbI2 is prepared, the ZnO electron transfer layer is coated with the DMF solution of the PbI2 in a spinning mode to prepare a PbI2 thin film, the PbI2 thin film is then steeped into an isopropanol solution of CH3NH3I, and thus the perovskite type material layer is obtained; 2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, an acetonitrile solution of lithium bis(trifluoromethanesulphonyl)imide and 4-tert-butylpyridine are dissolved in a chlorobenzene solution, the perovskite type material layer is then coated with the solution in a spinning mode, the hole transfer layer is obtained, then the metal back electrode layer is obtained, and the perovskite type solar cell is obtained.

Description

Technical field [0001] The invention relates to a solar cell, in particular to a perovskite type solar cell using sputtered ZnO as an electron transport layer and a preparation method. Background technique [0002] With the development of the global economy, energy consumption is increasing. Among them, oil resources are becoming less and less. The energy problem will surely become a major issue in the future. Solar energy is a renewable resource and is inexhaustible, so the development of solar cells is of great significance. However, today's solar cells have low photoelectric conversion efficiency or high cost. At present, silicon solar cells have high efficiency, but high temperature and high vacuum are required in the preparation process, and the cost is very high. Organic polymer solar cells have the characteristics of low cost, non-toxicity, easy preparation, and large-area flexible manufacturing, but their photoelectric conversion efficiency is still low. [0003] Perovsk...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/48
CPCH10K77/10H10K30/00H10K30/81Y02E10/549
Inventor 梁禄生陈伟中王保增蔡龙华陈凯武蔡耀斌白华田清勇范斌
Owner 昆山惟华光能有限公司
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