Copper alloy sputtering target and manufacturing method of copper alloy sputtering target

A manufacturing method and technology of copper alloy, applied in the field of sputtering target, can solve the problems of uneven film thickness of laminated film, easy occurrence of abnormal discharge, abnormal discharge, etc., to prevent particle generation, suppress abnormal discharge, and uniform film thickness Effect

Active Publication Date: 2015-02-11
MITSUBISHI MATERIALS CORP
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the film formation rate, it is necessary to increase the power applied to sputtering, but in general, if the applied power during sputtering is increased, abnormal discharge is likely to occur
In addition, when sputtering with a target made of Cu-Ca alloy, there is a problem that abnormal discharge is likely to occur when the applied power is increased.
[0011] Here, the abnormal discharge refers to a phenomenon in which an extremely high current suddenly and rapidly flows compared with normal sputtering, resulting in an abnormally large discharge. If such an abnormal discharge occurs, it may cause particles to be generated. Make the film thickness of the laminated film uneven

Method used

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  • Copper alloy sputtering target and manufacturing method of copper alloy sputtering target

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Experimental program
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Embodiment

[0053] [Production of sputtering target]

[0054] Prepare purity: Oxygen-free copper of 99.99% by mass or more (select oxygen-free copper whose Al, Si, Mg, and Fe are each 1 mass ppm or less), and high-frequency melt the oxygen-free copper in a high-purity graphite crucible in an Ar gas atmosphere. Copper, Ca with a purity of 98.5% by mass or more (Ca whose contents of Mg and Al are selected to be 50 mass ppm or less and a total of 100 mass ppm or less) is added to the obtained molten metal and melted to adjust the composition so that A molten metal having a predetermined composition is obtained, and the obtained molten metal is cast in a cooled cast iron mold to obtain an ingot.

[0055] In addition, after hot-rolling the ingot at 800° C., stress relief annealing was finally performed at 400° C., and the obtained rolled piece was lathe-processed to manufacture a size with an outer diameter of 152 mm and a thickness of 5 mm. A disk-shaped sputtering target with the compositio...

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Abstract

A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

Description

technical field [0001] The present invention relates to a copper alloy film used as a wiring film such as a gate electrode, a source electrode, and a drain electrode of a thin film transistor on a substrate made of glass, amorphous Si, or silicon dioxide, for example, by sputtering. A copper alloy sputtering target used as a target during sputtering, and particularly relates to a sputtering target made of a Cu—Ca-based alloy (Ca-containing copper alloy) and a method for producing a copper alloy sputtering target. [0002] This application claims priority based on Patent Application No. 2013-159962 filed in Japan on July 31, 2013 and Patent Application No. 2014-121527 filed in Japan on June 12, 2014, and uses the contents thereof here. Background technique [0003] A flat panel display such as a liquid crystal display or an organic EL display has a structure in which a thin film transistor (hereinafter simply referred to as "TFT") and a display circuit are formed on a substra...

Claims

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Application Information

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IPC IPC(8): C22C9/00C23C14/34
CPCC22C9/00B22D11/004H01J37/3429H01J37/3491C22C1/02B22D7/005B22D11/108C23C14/3414C22F1/08B22D7/02
Inventor 森晓坂本敏夫大久保清之
Owner MITSUBISHI MATERIALS CORP
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