A transmitting module for mode multiplexing-wavelength division multiplexing
A wavelength division multiplexing and mode multiplexing technology, which is applied in the field of planar optical waveguide integrated devices, can solve the problems of large device size and many waveguide crossings, and achieve the effects of reduced insertion loss, less waveguide crossings, and simple and compact structure
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Embodiment 1
[0066] Take M=4, N=16 as an example, which includes 64 node units and a 4-channel mode multiplexer.
[0067] The laser array contains 16 laser units, and the channel spacing of the emission wavelength of each laser unit is Δλ ch =1.6nm, where the wavelength emitted by the laser unit 1n is λ n =1525.6nm+nΔλ ch , n=1,...,N.
[0068] Here, each connecting waveguide is a silicon nanowire optical waveguide based on silicon insulator SOI material: its core layer is silicon material with a thickness of 220nm and a refractive index of 3.4744; its lower cladding material is SiO 2 , with a thickness of 2 μm and a refractive index of 1.4404; its cladding is air with a refractive index of 1.0.
[0069] Considering the situation of M=4 and N=16, the 1×2 power divider in the node unit 3mn adopts a directional coupler structure, and the first 2×2 power divider 3mn6, the fifth connecting waveguide 3mn12, the second 2×2 The annular cavity formed by connecting the power divider 3mn7 and the...
Embodiment 2
[0074] Take M=8, N=16 as an example, which includes 128 node units and an 8-channel mode multiplexer.
[0075] The laser array contains 16 laser units, and the channel spacing of the emission wavelength of each laser unit is Δλ ch = 1.6nm. The node unit adopts such as figure 2In the unit structure shown, each connecting waveguide is made of silicon nanowire optical waveguide based on silicon insulator SOI material, the 1×2 power divider 3mn5, the first 2×2 power divider 3mn6, and the second 2×2 power divider 3mn7 adopt Such as Figure 8 The multimode interference coupler structure shown. The waveguide of the optical modulation area in the optical modulator adopts Figure 4 In the structure shown, high-speed modulation is achieved by the mechanism of the carrier depletion type. The intersection of the first connecting waveguide 3mn8 and the second connecting waveguide 3mn9 widens the width of the waveguide to reduce loss and crosstalk.
Embodiment 3
[0077] Take M=2, N=8 as an example, which includes 16 node units and a 2-channel mode multiplexer.
[0078] The laser array contains 8 laser units, and the channel spacing of the emission wavelength of each laser unit is Δλ ch = 1.6nm. The node unit adopts such as figure 2 In the unit structure shown, each connecting waveguide is made of silicon nanowire optical waveguide based on silicon insulator SOI material, the 1×2 power divider 3mn5, the first 2×2 power divider 3mn6, and the second 2×2 power divider 3mn7 adopt Such as Figure 9 The Mach-Zehnder interference coupler structure shown. The waveguide of the optical modulation area in the optical modulator adopts Figure 5 In the structure shown, high-speed modulation is realized by a carrier accumulation type mechanism. The intersection of the first connecting waveguide 3mn8 and the second connecting waveguide 3mn9 widens the width of the waveguide to reduce loss and crosstalk.
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