Nanometer electro-spinning tectorial membrane etching support and method for curing intracranial aneurysm

A technology for intracranial aneurysms and aneurysm necks, applied in the field of medical devices, can solve problems such as unrelieved mass effect, distal thromboembolism, embolism dead ends, etc., to reduce the risk of rupture, promote thrombus formation, and achieve high completeness The effect of occlusion rate

Inactive Publication Date: 2015-03-11
何凡 +5
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of the stent, the stent-assisted coil technology increases the difficulty of placing the microcatheter in place, and also brings difficulties to the dense packing of the aneurysm. Partition packing
After embolization of aneurysms with balloon-assisted ONYX embolization, the space-occupying effect is usually not alleviated, but will also be aggravated. After embolization of fus

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanometer electro-spinning tectorial membrane etching support and method for curing intracranial aneurysm
  • Nanometer electro-spinning tectorial membrane etching support and method for curing intracranial aneurysm

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The present invention significantly changes intracranial aneurysm hemodynamics through simple stent placement, directly blocks the aneurysm neck, promotes thrombus formation and mechanization in the aneurysm, and achieves the purpose of anatomically reconstructing the parent artery while maintaining The parent artery is unobstructed, the treatment efficiency is high, and there are no side effects.

[0026] The present invention is described in detail below in conjunction with accompanying drawing:

[0027] Such as Figure 1 to Figure 2 Shown, a kind of nano electrospinning membrane etching stent that treats intracranial aneurysm, comprises:

[0028] The stent main body 1 has a cylindrical mesh structure, and four X-ray-opaque first marking points 2 are provided at both ends of the stent main body 1 for accurate release of the stent. The stent main body 1 can be made into different lengths, gradients, tapers and diameters according to different needs; the startin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a nanometer electro-spinning tectorial membrane etching support and method for curing intracranial aneurysm. The nanometer electro-spinning tectorial membrane etching support comprises a support main body of a cylindrical net structure. Four radio-opaque first mark points are arranged at each of two ends of the support main body and are used for accurate release of the support. Two radio-opaque second mark points used for developing positioning of the support in the release process are arranged at the starting point and the stop point of a tectorial membrane in the middle section of the support main body. The nanometer electro-spinning tectorial membrane etching support further comprises a push device. The push device is arranged at one end of the support main body and comprises a lead wire and a conveying pipe. The lead wire is located in the conveying pipe, and the front end of the lead wire is connected with the support main body. According to the nanometer electro-spinning tectorial membrane etching support and method, intracranial aneurysm haemodynamics changes simply by inserting the support, the aneurysmal neck can be directly blocked to promote thrombus forming and organizing in the arterial aneurysm, accordingly the purpose of rebuilding parent arteries anatomically is achieved, and the parent arteries are kept unblocked.

Description

technical field [0001] The invention relates to a medical device, in particular to a nano-electrospinning membrane-etched stent and a method for treating intracranial aneurysms. Background technique [0002] Intracranial aneurysm is an abnormal protrusion of intracranial aneurysm wall. Rupture of intracranial aneurysm is the main cause of spontaneous subarachnoid hemorrhage, the prognosis of patients with spontaneous subarachnoid hemorrhage is poor, the overall mortality rate is 25%, and the disability rate of survivors is close to 50%. [0003] At present, the treatment methods for intracranial aneurysms mainly include craniotomy to clamp the aneurysm neck and endovascular interventional therapy. Craniotomy to clamp the aneurysm neck is difficult and causes great trauma to the patient. Compared with surgery, endovascular interventional treatment is less difficult and causes less trauma to patients. At present, the overall prognosis of endovascular interventional treatment...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): A61F2/07A61L31/10A61L31/18
Inventor 何凡曾延华王露平李鑫李启洋陈旭东
Owner 何凡
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap