tio2 quantum dot composite mos2 nano flower heterojunction semiconductor material and preparation method thereof

A technology of nanoflowers and heterojunctions, applied in the direction of nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of inapplicability to large-scale industrial production, complex synthesis process, high production cost, etc., and achieve low cost and reliable Highly reproducible, reduced complexity effects
CN104402052BInactive Publication Date: 2016-02-10EAST CHINA NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
EAST CHINA NORMAL UNIV
Publication Date
2016-02-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a TiO2-quantum-dot-and-MoS2-nanometer-flower-combined heterojunction semiconductor material comprising MoS2 nanometer flower and TiO2 nanometer particles. A large amount of the TiO2 nanometer particles are uniformly distributed on the surface of the MoS2 nanometer flower, and are well compounded on the pedals. The TiO2 nanometer particle phase is in a punctiform dense distribution. The invention also discloses a preparation method of the TiO2-quantum-dot-and-MoS2-nanometer-flower-combined heterojunction semiconductor material. According to the method, with a two-step solvothermal method, the punctiform TiO2 nanometer particles are uniformly grown on the MoS2 nanometer flower, such that the material with a good composite morphology is obtained. The method provided by the invention has the advantages of simple operation, high yield, low preparation cost, and the like. The material provided by the invention has great development and application potential in the fields of photo-catalysis industrial wastewater and field emission.
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Description

technical field

[0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, and specifically relates to a TiO 2 Quantum dot composite MoS 2 Nanoflower heterojunction semiconductor material and its preparation method. Background technique

[0002] MoS 2 It is a metal sulfide with a narrow band gap, and it is also a typical two-dimensional layered semiconductor material. The layers are combined by weak van der Waals forces, making MoS 2 It has a wide range of applications in lithium-ion batteries, photocatalysis, field emission and sensors. Rutile TiO 2 It is a metal oxide with a wide bandgap. It is a three-dimensional semiconductor material that is easy to prepare and structurally modified. The granular semiconductor morphology is often used for semiconductor recombination. It is an excellent electron emission shape.

[0003] Recently, the academic community has begun to try the combination of two semiconductor m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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