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Sapphire single crystal growth PLC closed-loop control method

A closed-loop control, sapphire technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems that the automatic process cannot achieve real-time and precise control, the operator's vision is greatly affected, and the operation interface of the growth furnace is complicated. Achieve the effect of improving equipment operability, saving manpower and material resources, and reducing dependence

Active Publication Date: 2015-03-11
UNIONLIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the growth of sapphire crystals, especially crystals above 80 kilograms, is highly dependent on personnel, and the operation interface of the growth furnace is complicated, and the degree of automation of the equipment is low. It takes at least 3-6 months for beginners to master the operation of the entire set of equipment. The crystal growth furnace requires the operator to observe with the naked eye, facing the high-temperature melt for a long time, which has a great impact on the operator's vision
In order to solve the above problems, some crystal growth manufacturers have developed automatic control technology to grow crystals, but the degree of automatic control is generally not high, and there are only some stages (except seeding and shouldering stages) that use automatic control, or only for lifting The problem of the automatic control process of the two parameters of cooling power and crystal weight, and the automatic process cannot achieve the effect of real-time and precise control

Method used

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  • Sapphire single crystal growth PLC closed-loop control method
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  • Sapphire single crystal growth PLC closed-loop control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1: A PLC closed-loop control method for sapphire single crystal growth. A weighing sensor (with a weight accuracy of 1 / 100,000), a temperature sensor (with a temperature control accuracy of 0.1°C), a water flow sensor, and a sapphire growth furnace are installed. Water pressure transmitter and man-machine operating system, crystal growth curve parameters and PID parameters are imported into the operating system, and the operating system adjusts the output power and each Node temperature and water flow, so that the crystal grows automatically according to the established process; specifically includes the following steps:

[0027] (1) Put the high-purity alumina raw material into the crucible, put the crucible into the sapphire growth furnace, and close the furnace door;

[0028] (2) Heating: carry out low vacuum operation, when the vacuum degree reaches 1×10 －3 Pa, turn to high vacuum operation; when the vacuum reaches 2×10 －3 At Pa, start the heating syste...

Embodiment 2

[0040] Embodiment 2: A PLC closed-loop control method for sapphire single crystal growth. A load cell (with a weight accuracy of 1 / 100,000), a temperature sensor (with a temperature control accuracy of 0.1° C.), a water flow sensor, Water pressure transmitter and man-machine operating system, crystal growth curve parameters and PID parameters are imported into the operating system, and the operating system adjusts the output power and each Node temperature and water flow, so that the crystal grows automatically according to the established process; specifically includes the following steps:

[0041] (1) Put the high-purity alumina raw material into the crucible, put the crucible into the sapphire growth furnace, and close the furnace door;

[0042] (2) Heating: Carry out low vacuum operation, when the vacuum degree reaches 1.5×10 －3 Pa, turn to high vacuum operation; when the vacuum degree reaches 8×10 －3 At Pa, start the heating system, control the output power to increase ...

Embodiment 3

[0054] Embodiment 3: A PLC closed-loop control method for sapphire single crystal growth. A weighing sensor (with a weight accuracy of 1 / 100,000), a temperature sensor (with a temperature control accuracy of 0.1° C.), a water flow sensor, Water pressure transmitter and man-machine operating system, crystal growth curve parameters and PID parameters are imported into the operating system, and the operating system adjusts the output power and each Node temperature and water flow, so that the crystal grows automatically according to the established process; specifically includes the following steps:

[0055] (1) Put the high-purity alumina raw material into the crucible, put the crucible into the sapphire growth furnace, and close the furnace door;

[0056] (2) Heating: Carry out low vacuum operation, when the vacuum degree reaches 1.2×10 －3 Pa, turn to high vacuum operation; when the vacuum reaches 6×10 －3 At Pa, start the heating system and control the output power to increas...

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Abstract

The invention relates to a sapphire single crystal growth PLC (Programmable Logic Control) closed-loop control method and is characterized in that a weighing sensor, a temperature sensor, a water flow sensor, a water pressure transmitter and a human-machine operating system are mounted on a sapphire growth furnace, crystal growth curve parameters and PID (Proportion Integration Differentiation) parameters are led into the operating system, and the operating system compares crystal growth curves and regulates output power, the temperature of each node and water flow according to crystal actual weight measured by the automatically reading weighing sensor, so that crystals automatically grow by a known technology. The real-time comprehensive control of the automatic growth of large-sized and high-quality sapphire single crystals can be realized by the sapphire single crystal growth PLC closed-loop control method, the control precision is high, and the stability is great.

Description

technical field [0001] The invention relates to a sapphire single crystal growth control method, in particular to a PLC closed-loop control method for sapphire single crystal growth, belonging to the technical field of crystal growth. Background technique [0002] Sapphire single crystal has excellent comprehensive properties such as good transparency, high mechanical strength, excellent chemical stability and good thermal conductivity. First of all, it has ultra-high hardness and extremely low friction coefficient, second only to diamond in nature; it has high optical transmission performance in the ultra-wide band (300nm-5000nm); sapphire single crystal also has excellent acid and alkali corrosion resistance, Generally, acid and alkali cannot be corroded at room temperature or even in a molten state, so the commercial application of sapphire single crystal as a high-end optoelectronic material came into being. [0003] At present, the growth of sapphire crystals, especial...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/28C30B29/20
CPCC30B15/00C30B29/20
Inventor 裴广庆王佳麒罗亮远黄小卫柳祝平
Owner UNIONLIGHT TECH