Radio frequency LDMOS (lateral diffused metal oxide semiconductor) and manufacturing method thereof
A radio frequency and pocket-shaped technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of reducing output capacitance, reducing leakage, and increasing breakdown voltage
Active Publication Date: 2015-03-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
Therefore, it is difficult for traditional RF LDMOS devices to take into account all electrical parameters to achieve excellent device performance.
Method used
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Embodiment Construction
[0015] see figure 2 , which is the RF LDMOS device of this application. Taking an n-type radio frequency LDMOS device as an example, there is a p-type lightly doped epitaxial layer 2 on a p-type heavily doped substrate 1 . In the epitaxial layer 2 there is a p-type body region 5 and an n-type drift region 6 in side contact. The body region 5 contains the channel location of the RF LDMOS device of the present application. The depth of the drift region 6 is, for example, greater than that of the body region 5 . The body region 5 has an n-type heavily doped source region 8a in side contact and a p-type source end pocket-shaped implant region 7a. The source pocket implant region 7 a is located inside the source region 8 a and directly below the gate 4 . The doping concentration of the source pocket implant region 7 a is greater than that of the body region 5 . In the drift region 6 there is an n-type heavily doped drain region 8b and a p-type drain terminal pocket implant re...
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The invention discloses a radio frequency LDMOS (lateral diffused metal oxide semiconductor). The radio frequency LDMOS comprises a body region of the first doping type and a drift region of the second doping type which are in side surface contact, wherein the body region is provided with a source region of a second doping type and a source end bag-shaped injection region of the first doping type, the source end bag-shaped injection region is arranged inside the source region and arranged below a grid electrode; the drift region is equipped with a drain region of the second doping type and a drain end bag-shaped injection region of the first doping type, the drain end bag-shaped injection region is arranged inside the drain region. The invention further discloses a manufacturing method of the radio frequency LDMOS. The radio frequency LDMOS disclosed by the invention can be used for solving the contradiction among the low-conduction resistance, the low electric leakage, the high breakdown voltage and the low output capacitance.
Description
technical field [0001] The present application relates to a semiconductor device, in particular to an LDMOS device applied in the radio frequency field. Background technique [0002] RF LDMOS (Lateral Diffusion Field Effect Transistor) devices are commonly used semiconductor high-voltage devices, which are widely used in power amplifiers in radio frequency fields such as wireless base stations and broadcasting stations. [0003] see figure 1 , which is an existing RF LDMOS device. Taking an n-type radio frequency LDMOS device as an example, there is a p-type lightly doped epitaxial layer 2 on a p-type heavily doped substrate 1 . The epitaxial layer 2 has an n-type heavily doped source region 8a, a p-type channel doped region 5 and an n-type drift region 6 which are side-contacted in sequence. In the drift region 6 there is an n-type heavily doped drain region 8b. A gate oxide layer 3 and a polysilicon gate 4 are arranged sequentially above the channel doped region 5 and ...
Claims
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Login to View More IPC IPC(8): H01L29/78H01L21/265H01L21/336
CPCH01L21/26506H01L29/66681H01L29/7816
Inventor 钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP