Silicon carbide intermediate zone solar cell and manufacturing method thereof

Abstract

The invention provides a silicon carbide intermediate zone solar cell and a manufacturing method thereof. The silicon carbide intermediate zone solar cell comprises an n-type silicon carbide substrate, an intrinsic layer which is formed on the n-type silicon carbide substrate through deep level impurity ion implantation and nanosecond laser annealing and is taken as an intermediate zone light absorption layer, and a p-type cap layer formed on the intrinsic layer. The silicon carbide intermediate zone solar cell is firstly proposed and can greatly improve light response wavelength and conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon carbide middle-band solar cell and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) belongs to the third generation of wide bandgap semiconductor materials, which also include cubic boron nitride (c-BN), gallium nitride (GaN), aluminum nitride (AlN), diamond (C) and so on. Due to the outstanding advantages of wide bandgap, high critical breakdown field strength, good thermal conductivity, high carrier saturation drift velocity, and particularly stable chemical properties, silicon carbide materials are used in high temperature, high frequency, high power, and radiation-resistant microelectronics and Optoelectronic devices have great application potential. Silicon carbide materials have more than 200 isomeric polytypes, among which 3C-SiC, 6H-SiC and 4H-SiC are three relatively mature silicon carbide semiconductor materials. [00...

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Problems solved by technology

[0004] However, the current research on silicon carbide intermediate zone solar cells has just begun, and no new silicon carbide intermediate zone solar cell structure has been proposed.

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