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Method of preparing nitride epitaxial layer, substrate and device wafer

A technology of nitride epitaxial layer and device wafer, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as poor crystal quality and performance

Inactive Publication Date: 2015-03-11
江苏巨晶新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, HEMT devices currently use SiC or Si substrates as the initial substrates. Generally speaking, the crystal quality of nitride epitaxial layers or device growth on SiC substrates is high, and the device performance is better; Low cost on substrate, but relatively poor crystal quality and performance

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  • Method of preparing nitride epitaxial layer, substrate and device wafer
  • Method of preparing nitride epitaxial layer, substrate and device wafer
  • Method of preparing nitride epitaxial layer, substrate and device wafer

Examples

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Embodiment 1

[0047] In this embodiment, a GaN thick film is grown on a SiC substrate to prepare a self-supporting GaN substrate. The structure of nitride epitaxial layer growth is as follows image 3 As shown, the initial substrate 100 is 6H-SiC, and the crystal plane direction is (0001); the oxide sacrificial layer 200 is a layer of LiAlO 2 single crystal film with a layer of LiGaO 2 The single crystal thin film is composed together: among them, 201 is LiAlO 2 Single crystal thin film; 202 is LiGaO 2 single crystal film. The nitride epitaxial layer 300 includes a thinner AlN buffer layer 301 and a thicker GaN thick film layer 302 .

[0048] The specific production method is as follows:

[0049] First, a clean 6H-SiC initial substrate is selected, and the substrate is polished on one side, and the crystal orientation of the polished surface is (0001). Then, the initial substrate was placed into a pulsed laser deposition (PLD) system to grow a layer of LiAlO with a thickness of 0.1 μm...

Embodiment 2

[0054] In this embodiment, a GaN substrate is selected as an initial substrate to fabricate an LED device wafer with a vertical structure. The epitaxial structure of the LED device wafer is as follows Figure 4 As shown, the order from bottom to top of the substrate is as follows: the initial substrate 100 is GaN, and the oxide sacrificial layer 200 is LiGaO 2 A single crystal thin film, a nitride epitaxial layer 300 is a nitride LED epitaxial layer, a p-type ohmic contact layer 400 , and a metal copper substrate 500 .

[0055] For the nitride LED epitaxial layer, its composition is: n-Al 0.3 Ga 0.7 N buffer layer 303 , n-GaN electron injection layer 304 , InGaN / GaN multi-quantum well active region 305 , p-GaN hole injection layer 306 . The specific manufacturing method of the vertical structure nitride LED device wafer is as follows:

[0056] In the first step, a clean GaN initial substrate is selected, and the substrate is polished on one side, and the crystal orientatio...

Embodiment 3

[0063] In this embodiment, a SiC substrate is selected as an initial substrate to manufacture a HEMT epitaxial device wafer, and the HEMT device wafer is transferred to a Si substrate for chip device processing. The epitaxial structure of the HEMT device wafer is as follows Figure 7 As shown, the initial substrate 100 is 4H-SiC with (0001) crystal plane orientation, and the sacrificial oxide layer 200 is NaGaO 2 Single crystal thin film, 307 is AlN nucleation layer, 308 is GaN buffer layer, 309 is extremely thin AlN intermediate layer, 310 is Al 0.3 Ga 0.7 N layers. The specific manufacturing method of the HEMT device wafer is as follows:

[0064] In the first step, the cleaned semi-insulating 4H-SiC initial substrate is selected, and the substrate is polished on one side, and the crystal orientation of the polished surface is (0001). Then, the initial substrate was put into a pulsed laser deposition (PLD) system, and a layer of NaGaO with a thickness of 0.2 μm was grown ...

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Abstract

The invention relates to a method of preparing a nitride epitaxial layer, a substrate and a device wafer. The method comprises the steps of using at least one oxide film in a wurtzite-like crystal structure as a sacrificial layer to connect with the nitride epitaxial layer and the initial substrate; meanwhile, realizing the separation between the nitride epitaxial layer and the initial substrate through a chemical stripping method. According to the method provided by the invention, a selected oxide is likely to be decomposed in a chemical solution to realize wet etching, therefore, the beneficial conditions are provided for substrate stripping, substrate transferring, wafer bonding and other process technologies in the process of preparing the nitride epitaxial layer, a nitride substrate or a nitride device wafer, and the higher crystal quality of a material of the nitride epitaxial layer can be ensured.

Description

technical field [0001] The invention relates to a method for manufacturing a nitride epitaxial layer, a substrate and a device wafer, and belongs to the field of processing and manufacturing compound semiconductors. Background technique [0002] Currently, nitrides with a wurtzite crystal structure (Al x In y Ga 1-x-y The third-generation compound semiconductor products represented by N,0≤x,y≤1; x+y≤1) are entering a stage of rapid development: the types of devices are constantly enriched, the performance is continuously improved, the application fields are constantly expanding, and the market value is constantly rising . Compared with traditional semiconductor materials such as silicon and arsenide, it has incomparable advantages in the applications of high temperature, high power, high frequency, radiation resistance and high energy conversion efficiency. These applications include semiconductor lighting, information display, power production and transmission, new ener...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L21/208H01L21/205
CPCH01L21/2056H01L21/2085H01L33/0075H01L33/12H01L2933/0008H01L21/0254H01L21/02458H01L21/02488H01L21/0242H01L21/02378H01L21/02502H01L21/0262
Inventor 马亮胡兵裴晓将李金权刘素娟
Owner 江苏巨晶新材料科技有限公司
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