A kind of warm white OLED device and preparation method thereof
A warm white light and device technology, applied in the field of OLED devices, can solve the problems of insufficiently wide emission spectrum of phosphorescent guest, insufficiently high color rendering index, poor spectral stability, etc., and achieve excellent color rendering index, green preparation process, and easy operation. Effect
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[0038] The implementation method of the present invention will be described below in conjunction with specific embodiments.
[0039] The structure of the warm white light device involved in the present invention is as follows: figure 1 As shown, in which ITO (Indium Tin Oxides, indium tin oxide) conductive glass is used as the substrate and anode of the device, a layer of 35nm thick PEDOT:PSS (Poly-(3,4-ethylenedioxythiophene) Polystyrene sulfonate, poly(3,4 -ethylenedioxythiophene)-poly(styrenesulfonic acid)) as hole injection layer and electrode modification layer. The light-emitting layer consists of host materials DTCPFB and OXD-7, guest materials FIrpic, Ir(bt) 2 (acac), Ir(ppy) 2 (acac), Ir(MPCPPZ) 3 It is obtained by blending and doping in a certain proportion, and the total thickness of the light-emitting layer is 55nm. A layer of TPBI (1,3,5-Tri(1-phenyl-1H-benzo[d]imid-azol-2-yl)ph-enyl, 1,3,5-tri( 1-phenyl-1H-benzimidazol-2-yl)benzene) is the electron transpor...
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