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Layer-like germanium quantum dot material and preparation method thereof

A quantum dot material, layered technology, applied in metal material coating process, nanotechnology for materials and surface science, coating and other directions, can solve the problems of uneven size of Ge quantum dots, difficult composition control, etc. The effect of controllable composition and structure, uniform size, and adjustable band gap

Inactive Publication Date: 2015-03-18
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to overcome the problems in the prior art that Ge quantum dots are not uniform in size, difficult to control the composition and have defects, and provide a layered germanium quantum dot material and its preparation method

Method used

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  • Layer-like germanium quantum dot material and preparation method thereof
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  • Layer-like germanium quantum dot material and preparation method thereof

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preparation example Construction

[0022] The invention provides a method for preparing a layered germanium quantum dot material, the method comprising: alternately depositing SiO on a substrate 2 layer and Ge layer, and annealed.

[0023] In the present invention, conventional experimental materials in this field can be used as the substrate, such as Si sheet, quartz glass sheet and the like. The size of the substrate can be 1-10 inches, for example, can be 4 inches. Preferably, the substrate can also be cleaned before preparing the germanium quantum dot material of the present invention, and the cleaning method is well known to those skilled in the art.

[0024] In the present invention, the deposition method can achieve alternate deposition of SiO 2 Layers and individual layers are fine. In order to make the performance of the product more superior, it is preferred that the deposition method includes magnetron sputtering, and the magnetron sputtering method includes: under the condition of magnetron sputt...

Embodiment 1

[0034] This example is used to illustrate the preparation of uniform layered Ge quantum dot materials by the method of the present invention.

[0035] The material of the substrate is quartz glass (thickness 1mm), and the substrate is soaked in acetone and deionized water for 10 minutes, respectively, and ultrasonically cleaned for 10 minutes, wherein the ultrasonic frequency is 20kHz, and the ultrasonic power is 800W.

[0036] Load Ge target and SiO in the magnetron sputtering apparatus 2 target. After starting the magnetron sputtering apparatus, vacuumize to about 2×10 -5 Pa (the same below), the working gas flow is argon 30sccm (the same below), SiO 2 The target power is set to 200W (the same below), SiO 2 The target deposition rate is 2.5nm / min, the Ge target power is set to 80W (the same below), the Ge target deposition rate is 2nm / min, and the deposition pressure is 0.21Pa (the same below).

[0037] Put the cleaned substrate into the magnetron sputtering apparatus. ...

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Abstract

The invention provides a layer-like germanium quantum dot material and a preparation method thereof. The method comprises the following steps: alternately depositing a SiO2 layer and a Ge layer on a substrate, and annealing. The method disclosed by the invention can be used for preparing a Ge quantum dot material which is in layer-like distribution. The germanium quantum dot material disclosed by the invention is uneven in size of Ge quantum dots and has the advantages of being controllable in ingredients and structure, adjustable in band gap and the like.

Description

technical field [0001] The invention relates to a layered germanium quantum dot material and a preparation method thereof. Background technique [0002] Silicon (Si)-based photonics technology has gradually developed into a mature technology. In recent years, silicon-germanium low-dimensional quantum structures have been widely used and developed in the fields of detection, light emission and solar cells. In optoelectronic materials, germanium (Ge) quantum dot materials have greater absorption rate and stronger quantum confinement effect than Si quantum dot materials, and their carrier mobility is much higher than that of Si, and they have narrower band gaps. Ge has better optical properties than Si. As an inorganic optoelectronic material, Ge optoelectronic material has important research value. [0003] Ge quantum dots have also received more and more attention as potential optoelectronic functional materials. With the increase of the spatial confinement dimension, the ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/58C23C14/10C23C14/18B82Y30/00
Inventor 许应瑛李振军刘明举王小伟戴庆程志海裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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