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Organic electroluminescent device and preparation method thereof

An electroluminescent device and electroluminescent technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of total reflection loss, low light extraction efficiency, refractive index difference, etc.

Inactive Publication Date: 2015-03-18
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Abstract
  • Description
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Problems solved by technology

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as between glass and ITO). The difference between the refractive index, the refractive index of glass is 1.5, ITO is 1.8, light from ITO reaches the glass, it will be totally reflected), causing the loss of total reflection, resulting in a low overall light extraction efficiency

Method used

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  • Organic electroluminescent device and preparation method thereof
  • Organic electroluminescent device and preparation method thereof
  • Organic electroluminescent device and preparation method thereof

Examples

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preparation example Construction

[0046] Please also see figure 2 , the preparation method of above-mentioned organic electroluminescent device, it comprises the following steps:

[0047] Step S10 , providing a glass substrate 10 , and preparing an anode 20 on the surface of the glass substrate 10 by magnetron sputtering.

[0048] The glass substrate 10 is glass with a refractive index of 1.8-2.2, and the transmittance at 400 nm is higher than 90%. The glass substrate 10 is preferably glass with a grade of N-LAF36, N-LASF31A, N-LASF41A or N-LASF44.

[0049] The anode 20 is formed on one side surface of the glass substrate 10 . The material of the anode 20 is indium tin oxide (ITO), aluminum zinc oxide (AZO) or indium zinc oxide (IZO), preferably ITO. The thickness of the anode 20 is 80nm-300nm, preferably 120nm. The anode 20 is prepared by magnetron sputtering. The acceleration voltage of magnetron sputtering is 300-800V, the magnetic field is 50-200G, and the power density is 1-40W / cm 2 .

[0050] In ...

Embodiment 1

[0072] The structure prepared in this example is glass substrate / ITO / ZnO / CsF:PEDOT:PSS / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescent devices. Among them, " / " means cascading, and ":" means mixing.

[0073] Provide glass with the brand name N-LASF44 as the glass substrate, rinse the glass substrate with distilled water and ethanol, and soak it in isopropanol for one night. Then, the acceleration voltage is 700V, the magnetic field is 120G, and the power density is 250W / cm 2 Under the condition of , the anode was prepared by magnetron sputtering on the surface of the glass substrate. The material of the anode is ITO, and the thickness is 120nm.

[0074] Provide commercially available zinc oxide with a particle size of 150nm and an electron beam energy density of 30W / cm 2 Under the condition of , a zinc oxide layer with a thickness of 200nm was prepared on the anode by electron beam evaporation. CsF was dissolved in a mixed solution of poly(3,4-dioxethylenethiophe...

Embodiment 2

[0080] The structure prepared in this example is glass substrate / IZO / ZnO / Cs 2 CO 3 :PEDOT:PSS / MoO 3 / TAPC / DCJBT / TAZ / Cs 2 CO 3 / Pt organic electroluminescent devices. Among them, " / " means cascading, and ":" means mixing.

[0081] Provide glass with the brand name N-LAF36 as the glass substrate, rinse the glass substrate with distilled water and ethanol, and soak it in isopropanol for one night. Then, the acceleration voltage is 300V, the magnetic field is 50G, and the power density is 40W / cm 2 Under the condition of , the anode was prepared by magnetron sputtering on the surface of the glass substrate. The material of the anode is IZO with a thickness of 80nm.

[0082] Provide commercially available zinc oxide with a particle size of 50nm at an electron beam energy density of 100W / cm 2 Under the condition of , a zinc oxide layer with a thickness of 10nm was prepared on the anode by electron beam evaporation. Will Cs 2 CO 3 Dissolved in a mixed solution of poly(3,4-d...

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Abstract

The invention discloses an organic electroluminescent device, including a glass substrate, an anode, a scattering layer, a hole injection layer, a hole transport layer, a luminous layer, an electron transport layer, an electron injection layer and a cathode which are stacked in sequence. The scattering layer includes a zinc oxide layer formed on the surface of the anode and a cesium salt layer formed on the surface of the zinc oxide layer, and the material of the cesium salt layer is a mixture of cesium salt, poly (3,4-ethylenedioxythiophene) and polyphenyl sulfonate. The scattering layer of the organic electroluminescent device includes a zinc oxide layer and a cesium salt layer, using a crystal structure of zinc oxide to enable light to scatter, and light emitted towards two sides can return to the middle. Compared with a conventional organic electroluminescent device, the light extraction efficiency of the organic electroluminescent device is relatively high. The invention also discloses a preparation method of the abovementioned organic electroluminescent device.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] In 1987, C.W.Tang and Van Slyke of Eastman Kodak Company in the United States reported a breakthrough in the research of organic electroluminescence. A high-brightness, high-efficiency double-layer organic electroluminescent device (OLED) has been prepared using ultra-thin film technology. Brightness up to 1000cd / m at 10V 2 , its luminous efficiency is 1.51lm / W, and its lifespan is more than 100 hours. [0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as between glass and ITO). The difference between the refractive index, the refractive index of glass is 1.5, ITO is 1.8, light from ITO reaches the glass, it will...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K85/10H10K85/00H10K50/11H10K50/854H10K71/00
Inventor 周明杰黄辉钟铁涛王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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