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Monodisperse grinding fluid and preparation method thereof and method for preparing inorganic oxide sol

A technology of inorganic oxides and grinding fluids, applied in other chemical processes, chemical instruments and methods, etc., can solve the problem of wide particle size distribution and achieve uniform particle size distribution

Inactive Publication Date: 2015-03-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But, in the grinding liquid of prior art, the particle size distribution range of silicon dioxide or ceria is wide, as figure 1 As shown, due to the different particle sizes of silicon dioxide, many scratches will be induced when grinding thin film layers of soft materials such as copper and low dielectric constant substances, such as figure 2 shown

Method used

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  • Monodisperse grinding fluid and preparation method thereof and method for preparing inorganic oxide sol
  • Monodisperse grinding fluid and preparation method thereof and method for preparing inorganic oxide sol
  • Monodisperse grinding fluid and preparation method thereof and method for preparing inorganic oxide sol

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preparation example Construction

[0058] In combination with the above core idea, the present invention also provides a preparation method of inorganic oxide sol, such as image 3 shown, including:

[0059] Proceed to step S11: providing a solvent, preferably, the solvent is pure water or ethanol.

[0060] Proceed to step S12: adding a predetermined amount of raw materials for the reaction of inorganic oxides into the solvent, so as to form nano inorganic oxides in the solvent. Wherein, the predetermined amount can be selected according to the final required average particle size of the nano-inorganic oxide and the amount of the inorganic oxide sol, and is not specifically limited.

[0061] Proceed to step S13: detecting the particle size of the nano inorganic oxide. Preferably, the particle size of the nano-inorganic oxide can be detected by methods such as laser particle size analyzer or transmission electron microscope.

[0062] Proceed to step S14: judge, if the particle size of the nano-inorganic oxide...

no. 1 example

[0073] The nano-inorganic oxide in the first embodiment is silicon dioxide.

[0074] First, proceed to step S21: prepare an inorganic oxide sol. In this embodiment, step S21 adopts the following steps:

[0075] Go to step S11: provide a solvent, in this embodiment, the solvent is ethanol;

[0076] Proceed to step S12: adding a predetermined amount of raw materials for the reaction of inorganic oxides into the solvent, so as to form nano inorganic oxides in the solvent. Since in this embodiment, the nano-inorganic oxide is silicon dioxide, it is preferable to select tetraethyl orthosilicate and formamide as raw materials for the reaction of the inorganic oxide. In this embodiment, the predetermined particle size is 150nm, so the predetermined amount can be set to 50ml of tetraethyl orthosilicate and 10ml of formamide;

[0077] Proceed to step S13: detecting the particle size of the nano-inorganic oxide;

[0078] Proceed to step S14: judge, in this embodiment, the particle si...

no. 2 example

[0087] The nano-inorganic oxide in the second embodiment is silicon dioxide, and the predetermined particle size is 300 nm.

[0088] First, proceed to step S21: prepare an inorganic oxide sol. In this embodiment, step S21 adopts the following steps:

[0089] Go to step S11: provide a solvent, in this embodiment, the solvent is ethanol;

[0090] Proceed to step S12: adding a predetermined amount of raw materials for the reaction of inorganic oxides into the solvent, so as to form nano inorganic oxides in the solvent. Since in this embodiment, the nano-inorganic oxide is silicon dioxide, it is preferable to select tetraethyl orthosilicate and formamide as raw materials for the reaction of the inorganic oxide. In this embodiment, the predetermined particle size is 300nm, so the predetermined amount can be set to 50ml of tetraethyl orthosilicate and 10ml of formamide;

[0091] Proceed to step S13: detecting the particle size of the nano-inorganic oxide;

[0092] Proceed to step...

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Abstract

The invention discloses monodisperse grinding fluid. The monodisperse grinding fluid comprises 2-20 parts of nanometer inorganic oxides, 0-15 parts of metal oxidizing agents, 0-10 parts of an anti-settling agent, 0.1-5 parts of a surfactant, 0-10 parts of pH buffer agents and 40-97 parts of a solvent, wherein the relative standard deviation of the particle size of the nanometer inorganic oxides is less than or equal to 10 percent. The invention also discloses a method for preparing the monodisperse grinding fluid and a method for preparing inorganic oxide sol. In the monodisperse grinding fluid, the particle size distribution of the nanometer inorganic oxides in the monodisperse grinding fluid is uniform, and when a wafer is ground by adopting the monodisperse grinding fluid, the wafer is prevented from being scratched.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a monodisperse grinding liquid, a preparation method thereof, and an inorganic oxide sol preparation method. Background technique [0002] In recent years, along with the high integration and high performance of semiconductor integrated circuits, new microfabrication technologies have been developed. Chemical mechanical polishing (CMP) is also one of them. During chemical mechanical polishing, the abrasive between the pressed wafer and the polishing pad is used to simultaneously perform mechanical processing and chemical etching of the abrasive liquid. Semiconductor processing technology. [0003] The types of polishing liquids are roughly classified into polishing liquids for oxides, polishing liquids for metals, and polishing liquids for polysilicon according to the types of polishing objects. In particular, polishing liquids for metals are suitable for use...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14
Inventor 王芬蒋庆红刘庆修王立众杨志强
Owner SEMICON MFG INT (SHANGHAI) CORP