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A method for preparing a silicon target

A target, silicon technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of small resistivity adjustment range, limited application of silicon target, small size of silicon target, etc. The effect of large size, uniform distribution and short production cycle

Inactive Publication Date: 2016-12-07
DONGGUAN DONGYANG SOLAR SCI RES & DEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The silicon target prepared by this method has high purity and no cracks, and is widely used in the preparation of silicon target materials. However, the size of the silicon target is small, the adjustment range of the resistivity is small, and the loss is more when it is made into a planar target. Applications in the field of sputtering

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Place 130kg of silicon block evenly on the bottom of the quartz crucible, take 0.1kg of 3% silicon-boron alloy, divide it into 5 piles and place them in the four corners and the center area respectively, continue to add 270kg of silicon material into the crucible, so that the silicon and the crucible wall are in smooth contact ;Put the crucible in the ingot furnace, start vacuum heating, and heat it to 1560°C for 5 hours; keep melting the silicon material at 1560°C, and keep it for 0.5h after the silicon liquid is completely melted from the observation window; (4) Slowly lift Heat the insulation cage to 17cm, and reduce the power to maintain the growth rate of the silicon ingot at 1.5cm / h; after the crystal growth is completed, keep it at 1360°C for 5 hours for annealing treatment to eliminate internal stress; open the heat insulation cage completely to make the silicon ingot grow rapidly Cool to 200°C. Finally, the furnace was opened to remove the quartz crucible, and ...

Embodiment 2

[0019] Place 150kg of silicon block evenly on the bottom of the quartz crucible, take 0.2kg of 3% aluminum-silicon alloy, divide it into 5 piles and place them in the four corners and the center area respectively, continue to add 300kg of silicon material into the crucible, so that the silicon is in smooth contact with the crucible wall ;Put the crucible in the ingot casting furnace, start vacuum heating, heat up to 1560°C for 6 hours; keep at 1560°C, continue to melt the silicon material, and keep it for 1 hour after the silicon liquid is completely melted from the observation window; slowly lift the heat insulation cage to 17cm, and reduce the power to maintain the growth rate of the silicon ingot at 2cm / h; after the crystal growth is completed, keep it at 1360°C for 5h for annealing treatment to eliminate internal stress; open all the heat insulation cages to rapidly cool the silicon ingot to 200°C . Finally, the furnace was opened to remove the quartz crucible, and the sur...

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PUM

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Abstract

The invention relates to a preparation method of a target material. The method comprises the following steps of mixing and charging a high-purity polycrystalline silicon raw material and a dopant to obtain a mixture, placing the mixture in an ingot furnace, vacuumizing, heating, melting, and carrying out crystal growth, annealing and cooling, cutting and polishing silicon ingots to obtain the square target material. The preparation method is short in production period, the resistivity of the silicon target material can be continuously and accurately controlled by virtue of the amount of the dopant and the silicon target material has the characteristics of uniform distribution, large size, intact crystal and the like.

Description

technical field [0001] The invention relates to the field of preparation of silicon targets, in particular to a method for preparing silicon targets by using a directional solidification process. technical background [0002] Silicon target is an important sputtering target source, mainly used in glass, display, solar cells and other fields, and functions in the form of silicon film or silicon dioxide film. The traditional preparation methods are generally powder sintering method and pulling method. The powder sintering method first breaks the silicon material into powder, then presses it into the target shape, and then sinters it at high temperature. The advantage of the powder sintering method is that the silicon target can be made into a preset shape with less material loss. The disadvantage is that the silicon target prepared by this method is uneven in texture; the pulling method refers to the method of single crystal growth to prepare single crystal silicon. Then it ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
CPCC23C14/3414
Inventor 彭迟香
Owner DONGGUAN DONGYANG SOLAR SCI RES & DEV CO LTD