Decoupling capacitor structure in integrated passive device (IPD) and manufacturing method of decoupling capacitor structure

Abstract

The invention relates to a decoupling capacitor structure in an integrated passive device (IPD) and a manufacturing method of the decoupling capacitor structure. The manufacturing method includes providing a semiconductor substrate as a lower electrode plate of a decoupling capacitor, and doping ions in the semiconductor substrate; forming a patterned hard mask layer on the semiconductor substrate and etching the semiconductor substrate so as to form a groove in the semiconductor substrate and define a decoupling capacitor area; depositing a medium layer in the groove as a medium layer of the decoupling capacitor; filling the groove by conductive materials as an upper electrode plate of the decoupling capacitor; forming a contact hole in the upper electrode plate so as to be electrically connected with the decoupling capacitor. The decoupling capacitor structure is capable of removing interference of high radio-frequency signals, in-chip integration of the decoupling capacitor and the IPD is realized, and miniaturization of multifunctional passive devices can be promoted.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a decoupling capacitor structure in an integrated passive device and a preparation method thereof. Background technique [0002] For the increasing demand for high-capacity semiconductor storage devices, the integration density of these semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been adopted in the prior art, such as by reducing the wafer size. And / or change the internal structure unit to form multiple memory units on a single wafer. For the method of increasing the integration density by changing the unit structure, attempts have been made to reduce the unit area. [0003] With the continuous development of semiconductor technology and the wide application of integrated circuits and large integrated circuits, the components that mak...

AI Technical Summary

Problems solved by technology

Therefore, for conventional IPD devices, decoupling capacitors are realized through external integration, such as capacitors on the package substrate PCB, such as figure 1 As shown, the capacitor 102 at the position is set on the packaging substrate 101 to realize the decoupling capacitance of the IPD device 100, but the method and structure are not conducive to the miniaturization of the device, and additional signals on the packaging substrate PCB board are introduced Interference, detrimental to signal integrity design

[0006] Therefore, in summary, the structure of the decoupling and capacitance in the IPD device in the prior art has a large size, and also generates interference signals, which affects the performance of the device, so the structure needs to be improved to eliminate the above disadvantages

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