A kind of alxga1-xn nanowire array and its preparation method and application

A technology of nanowire array and carbon cloth, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., to achieve the effect of moderate density, uniform length and uniform density

Inactive Publication Date: 2016-06-22
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the research and development of flexible nitride field emission cathode materials that meet the development requirements of lightweight and foldable nitride optoelectronic devices has not been reported yet.

Method used

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  • A kind of alxga1-xn nanowire array and its preparation method and application
  • A kind of alxga1-xn nanowire array and its preparation method and application
  • A kind of alxga1-xn nanowire array and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0058] a kind of Al x Ga 1-x N nanowire arrays, using chemical vapor deposition, with carbon cloth as a flexible substrate, AlCl 3 as aluminum source, GaCl 3 It is prepared by reacting gallium source with ammonia gas as nitrogen source. Its preparation is carried out in a horizontal tube furnace with four temperature zones, and the schematic diagram of the device is shown in figure 1 Shown, specifically comprise following preparation steps:

[0059] (1) Choose a carbon cloth that does not contain a catalyst and a seed layer. The size of the carbon cloth is 1cm×4cm. Immerse the carbon cloth in an alcohol solution for 10 minutes, then rinse it with deionized water for 3 times, and finally keep it warm in an oven at 100°C. 1 hour to dry for later use;

[0060] (2) 0.4 g of AlCl 3 with 0.4 g GaCl 3 respectively placed in two quartz boats;

[0061] (3) For the four-temperature-zone horizontal tube furnace, the three-stage temperature zone close to the gas outlet is set as t...

Embodiment 2

[0068] a kind of Al x Ga 1-x N nanowire arrays were prepared using the same device as in Example 1, specifically including the following preparation steps:

[0069] (1) Choose a carbon cloth that does not contain a catalyst and a seed layer. The size of the carbon cloth is 1cm×4cm. Immerse the carbon cloth in an alcohol solution for 10 minutes, then rinse it with deionized water for 3 times, and finally keep it warm in an oven at 100°C. 1 hour to dry for later use;

[0070] (2) 0.4 g of AlCl 3 with 0.4 g GaCl 3 respectively placed in two quartz boats;

[0071] (3) For the four-temperature-zone horizontal tube furnace, the three-stage temperature zone close to the gas outlet is set as the first temperature zone, the gallium source temperature zone, the aluminum source temperature zone and the deposition zone in sequence according to the airflow direction; GaCl will be installed 3 The quartz boat placed in the gallium source temperature zone will be filled with AlCl 3 The ...

Embodiment 3

[0076] a kind of Al x Ga 1-x N nanowire arrays were prepared using the same device as in Example 1, specifically including the following preparation steps:

[0077] (1) Choose a carbon cloth that does not contain a catalyst and a seed layer. The size of the carbon cloth is 1cm×4cm. Immerse the carbon cloth in an alcohol solution for 10 minutes, then rinse it with deionized water for 3 times, and finally keep it warm in an oven at 100°C. 1 hour to dry for later use;

[0078] (2) 0.4 g of AlCl 3 with 0.4 g GaCl 3 respectively placed in two quartz boats;

[0079] (3) For the four-temperature-zone horizontal tube furnace, the three-stage temperature zone close to the gas outlet is set as the first temperature zone, the gallium source temperature zone, the aluminum source temperature zone and the deposition zone in sequence according to the airflow direction; GaCl will be installed 3 The quartz boat placed in the gallium source temperature zone will be filled with AlCl 3 The ...

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Abstract

The invention belongs to the technical field of nanometre material preparation, and discloses an AlxGa1-xN nanowire array capable of being used as an emitting cathode material of a flexible field as well as a preparation method and an application thereof. The preparation method comprises the following steps: adopting a chemical vapour deposition method, by taking a carbon cloth as a flexible substrate, taking AlCl3 as an aluminium source, taking GaCl3 as a gallium source, and reacting with ammonia gas to generate the AlxGa1-xN nanowire array. The morphology of the obtained AlxGa1-xN nanowire array is a quasi-oriented nanowire array, and capable of being applied to the technical field of field emission display. According to the preparation method, the carbon cloth is used as the substrate, and thus the AlxGa1-xN nanowire array has excellent flexibility and electrical conductivity; moreover, a partial vapour pressure can be adjusted by changing the evaporation temperatures of AlCl3 and GaCl3, thus realizing the component adjustment of the AlxGa1-xN nanowire array. The AlxGa1-xN nanowire array is uniform in density and length, large in length-diameter ratio and moderate in density, and has a potential application value in field emission.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanometer materials, in particular to an Al with adjustable composition x Ga 1-x N nanowire array and its preparation method and application. Background technique [0002] With the development of nanoscience and technology, optoelectronic devices are gradually moving towards the direction of lightweight, miniaturization, integration, bendability and wearable, making flexible optoelectronic devices in foldable displays, batteries, capacitors, sensors, electronic paper, wearable Wearable electronic fabrics and large-scale curved displays on building surfaces have broad application prospects. Therefore, using semiconductor nanomaterials as structural units to construct functional flexible systems on foldable and bendable substrates with excellent thermal and electrical conductivity, while meeting the requirements of light weight, low cost, and portability of flexible systems, is currently a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/06B82Y30/00
Inventor 季小红陈飞王婷
Owner SOUTH CHINA UNIV OF TECH
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