Self-doping localized surface plasma resonance Cu(3-x)P nanocrystalline and preparation method thereof

A plasmonic resonance, localized surface technology, applied in nanotechnology, chemical instruments and methods, single crystal growth, etc., can solve the problems of difficult control, highly toxic phosphine gas, etc., to reduce the reaction temperature and danger. , the reaction process is controllable, and the effect of huge application prospects

Active Publication Date: 2015-04-22
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the phosphine gas used in this method is highly toxic and difficult to control

Method used

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  • Self-doping localized surface plasma resonance Cu(3-x)P nanocrystalline and preparation method thereof
  • Self-doping localized surface plasma resonance Cu(3-x)P nanocrystalline and preparation method thereof
  • Self-doping localized surface plasma resonance Cu(3-x)P nanocrystalline and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1: Hexagonal self-doping localized surface plasmon resonance Cu 3-x Preparation of P nanocrystals.

[0037] 1) Preparation of copper precursor: Add 60mg (0.6mmol) cuprous chloride, 444mg (1.2mmol) trioctylphosphine and 5mL oleylamine into a 25mL three-necked flask, stir and vacuumize at 100°C for 1 hour, Obtain copper precursor, stand-by;

[0038] 2) Nitrogen gas was introduced into the three-necked flask, and the temperature was adjusted to 120°C, and 250mg of (TMS) with a mass concentration of 10% 3 P n-hexane solution (wherein (TMS) 3 The amount of P is about 0.1mmol) and 1mL of octadecene are mixed evenly and the n-hexane is vacuum-drained, then quickly injected into the above-mentioned copper precursor with a syringe, and continue to react for 10 minutes;

[0039] 3) After the reaction, cool down to room temperature in an air bath, add acetone until the reaction solution becomes turbid, centrifuge in a centrifuge and discard the supernatant; then dissolv...

Embodiment 2

[0040] Example 2: Hexagonal self-doping localized surface plasmon resonance Cu 3-x Preparation of P nanocrystals.

[0041] 1) Preparation of copper precursor: Add 60mg (0.6mmol) cuprous chloride, 666mg (1.8mmol) trioctylphosphine and 5mL oleylamine into a 25mL three-necked flask, stir and vacuumize at 100°C for 1 hour, Obtain copper precursor, stand-by;

[0042] 2) Nitrogen gas was introduced into the three-necked flask, and the temperature was adjusted to 120°C, and 250mg of (TMS) with a mass concentration of 10% 3 P n-hexane solution (wherein (TMS) 3 The amount of P is about 0.1mmol) and 1mL of octadecene are mixed evenly and the n-hexane is vacuum-drained, then quickly injected into the above-mentioned copper precursor with a syringe, and continue to react for 10 minutes;

[0043] 3) After the reaction, cool down to room temperature in an air bath, add acetone until the reaction solution becomes turbid, centrifuge in a centrifuge and discard the supernatant; then dissolv...

Embodiment 3

[0044] Example 3: Hexagonal self-doping localized surface plasmon resonance Cu 3-x Preparation of P nanocrystals.

[0045] 1) Preparation of copper precursor: Add 60mg (0.6mmol) cuprous chloride, 888mg (2.4mmol) trioctylphosphine and 5mL oleylamine into a 25mL three-necked flask, stir and vacuumize at 100°C for 1 hour, Obtain copper precursor, stand-by;

[0046] 2) Nitrogen gas was introduced into the three-necked flask, and the temperature was adjusted to 120°C, and 250mg of (TMS) with a mass concentration of 10% 3 P n-hexane solution (wherein (TMS) 3 The amount of P is about 0.1mmol) and 1mL of octadecene are mixed evenly and the n-hexane is vacuum-drained, then quickly injected into the above-mentioned copper precursor with a syringe, and continue to react for 10 minutes;

[0047] 3) After the reaction, cool down to room temperature in an air bath, add acetone until the reaction solution becomes turbid, centrifuge in a centrifuge and discard the supernatant; then dissolv...

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PUM

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Abstract

The invention discloses a self-doping localized surface plasma resonance Cu(3-x)P nanocrystalline and a preparation method thereof. Specifically, the method disclosed by the invention comprises three steps including preparation of a copper precursor, synthesis of Cu(3-x)P nanocrystalline and high-temperature heating aftertreatment; and the Cu(3-x)P nanocrystalline of which the size is 5.3-44.2nm and the localized surface plasma resonance absorption peak is adjustable within a range from 1,390 to 1,710nm, can be obtained by controlling the reaction conditions, the C band (1,530-1,565nm) and L band (1,565-1,625nm) of optical communication are just covered, and the intensity of resonance absorption can be controlled through high-temperature heating so that the material has tremendous application prospect in terms of optical communication and pulse lasers.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a self-doped localized surface plasmon resonance Cu 3-x P nanocrystal and its preparation method. Background technique [0002] When light is incident on a nanoparticle composed of a noble metal, if the frequency of the incident photon matches the overall vibration frequency of the conduction electrons of the noble metal nanoparticle, the nanoparticle will have a strong absorption effect on the photon energy, and localization will occur. surface plasmon resonance. Nanocrystals with localized surface plasmon resonance (LSPR: Localized Surface Plasmon Resonance) effect have great application prospects in optoelectronic devices, data storage, microscopy, solar cells, and biosensing. [0003] For the most widely studied noble metals (gold, silver, copper), the free carrier concentration is very large, and most of the plasmon resonance absorption peaks are in the visibl...

Claims

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Application Information

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IPC IPC(8): C30B29/10C30B7/14B82Y40/00
CPCB82Y40/00C30B7/14C30B29/10
Inventor 马万里刘泽柯
Owner SUZHOU UNIV
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