Preparation method of beta-Ga2O3/SiC nanometer composite material

A nanocomposite material, -ga2o3 technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of complex preparation process, large particle size, long reaction time, etc., and achieve simple device structure and small particle size. , the effect of low cost

Inactive Publication Date: 2015-04-29
HEILONGJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention provides a β-Ga 2 o 3 / SiC nanocomposite preparation method

Method used

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  • Preparation method of beta-Ga2O3/SiC nanometer composite material
  • Preparation method of beta-Ga2O3/SiC nanometer composite material
  • Preparation method of beta-Ga2O3/SiC nanometer composite material

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specific Embodiment approach 1

[0038] Specific implementation mode 1: a kind of β-Ga in this implementation mode 2 o 3 The preparation method of SiC nanocomposite material is carried out according to the following steps:

[0039] 1. Add urea into deionized water under magnetic stirring at a stirring speed of 100r / min to 500r / min, and then heat the urea at a temperature of 40 to 100°C and a stirring speed of 100r / min to 500r / min Dissolve completely, then add Ga(NO 3 ) 3 aqueous solution, and stirred at a stirring speed of 100r / min to 500r / min until a colorless and transparent solution is obtained;

[0040] The ratio of the quality of the urea to the volume of the deionized water is 1g: (2-4) mL, the quality of the urea to the Ga(NO 3 ) 3 The volume ratio of the aqueous solution is 1g: (2-4) mL, the Ga(NO 3 ) 3 The concentration of the aqueous solution is 50g / L~70g / L;

[0041] 2. Transfer the colorless and transparent solution obtained in step 1 to a container lined with polytetrafluoroethylene, then ...

specific Embodiment approach 2

[0051] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 1, urea is added to the deionized water under magnetic stirring at a stirring speed of 200 r / min. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0052] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in Step 1, the temperature is 60° C. and the stirring speed is 200 r / min, and then heated until the urea is completely dissolved. Other steps and parameters are the same as those in Embodiment 1 or 2.

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Abstract

The invention relates to a preparation method of a beta-Ga2O3/SiC nanometer composite material, and solves the problems of large particle diameter, complex preparation process and long reaction time of the traditional method. The preparation method comprises the following steps: 1, adding urea to deionized water, heating and stirring till the urea is completely dissolved, then adding a Ga(NO3)3 solution, and stirring till a colorless transparent solution is obtained; 2, transferring into a container with a polytetrafluoroethylene lining, then placing the container into a microwave digestion furnace for heating, and after reaction is finished, naturally cooling to room temperature to obtain a gamma-Ga2O3 precursor; 3, dropwise adding the gamma-Ga2O3 precursor to SiC, and then firstly drying moisture through microwave evaporation and then carrying out microwave heat treatment to obtain an SiC-containing solid mixture; 4, adding the SiC-containing solid mixture to the deionized water for centrifugalization, and then carrying out vacuum drying to obtain the beta-Ga2O3/SiC nanometer composite material.

Description

technical field [0001] The present invention relates to a kind of β-Ga 2 o 3 / SiC nanocomposite preparation method. Background technique [0002] Since the first observation of TiO 2 Since the electrode can split water under light irradiation, TiO 2 The research on the representative semiconductor photocatalyst has become one of the most concerned hotspots in materials science. However TiO 2 And its modified materials still show low activity on the degradation of some refractory pollutants (such as perfluorooctanoic acid). So, to develop a TiO 2 Nanomaterials other than nanomaterials have become a challenging topic as effective photocatalysts. [0003] At present, Ga-based nanomaterials with wider bandgap (such as GaOOH, Ga 2 o 3 ) has attracted extensive attention. Especially β-Ga 2 o 3 (E g =4.8eV,E cb =-2.95eV), relative to TiO 2 (E g =3.2eV,E cb =-4.21eV) has a wider bandgap, and its conduction band photogenerated electrons are more than TiO 2 The photo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/224B82Y30/00B82Y40/00A62D3/17A62D101/26A62D101/28
Inventor 辛柏福周长青陈鹏刚王虹吴杰
Owner HEILONGJIANG UNIV
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