Anion-cation co-doped bismuth silicate scintillation crystal and preparation method thereof
A scintillation crystal, anion and cation technology, applied in the direction of crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of low emission spectrum intensity and absorption, and achieve the goal of reducing binding force, increasing luminous intensity, and improving absorption. Effect
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Embodiment 1
[0049] Bi with a purity of not less than 99.99% 2 o 3 , SiO 2 and BaF 2 The solid powder was dried at about 200°C for 20 hours for dehydration; the Bi 2 o 3 , SiO 2 According to the molar ratio of 2:3, it is accurately weighed and fully mixed evenly, pressed into a block, and then sintered at 880°C for 5 hours by high-temperature solid-state method to obtain the BSO polycrystalline material;
[0050] Taking BSO single crystal as seed crystal, the dopant BaF 2 (200ppm) is fully mixed with BSO polycrystalline material by mechanical mixing, and then doped with BaF 2 The BSO polycrystalline material and seed crystal were put into a platinum crucible with a thickness of 0.14mm and closed. Then use the crucible descending method for crystal growth: first raise the furnace temperature to 1130°C for 15 hours, and keep it warm for 6 hours; gradually lift the downpipe until all the raw materials in the crucible are melted, and then keep it warm for 1.5 hours; use 0.4mm / h The spe...
Embodiment 2
[0053] Bi with a purity of not less than 99.99% 2 o 3 , SiO 2 and BaF 2 The solid powder was dried at about 200°C for 20 hours for dehydration; the Bi 2 o 3 , SiO 2 According to the molar ratio of 2:3, it is accurately weighed and fully mixed evenly, pressed into a block, and then sintered at 900°C for 3 hours by high-temperature solid-state method to obtain the BSO polycrystalline material;
[0054] Taking BSO single crystal as seed crystal, the dopant BaF 2 (500ppm) is fully mixed with BSO polycrystalline material by mechanical mixing, and then doped with BaF 2 The BSO polycrystalline material and seed crystal were put into a platinum crucible with a thickness of 0.14mm and closed. Then use the crucible descending method for crystal growth: firstly raise the furnace temperature to 1140°C for 15 hours, and keep it warm for 6 hours; gradually lift the downpipe until all the raw materials in the crucible are melted, and then keep it warm for 1.5 hours; use 0.4mm / h The s...
Embodiment 3
[0057] Bi with a purity of not less than 99.99% 2 o 3 , SiO 2 and BaF 2 The solid powder was dried at about 200°C for 20 hours for dehydration; the Bi 2 o 3 , SiO 2 According to the molar ratio of 2:3, it is accurately weighed and fully mixed evenly, pressed into a block, and then sintered at 880°C for 5 hours by high-temperature solid-state method to obtain the BSO polycrystalline material;
[0058] Taking BSO single crystal as seed crystal, the dopant BaF 2 (1000ppm) is fully mixed with BSO polycrystalline material by mechanical mixing, and then doped with BaF 2 The BSO polycrystalline material and seed crystal were put into a platinum crucible with a thickness of 0.14mm and closed. Then use the crucible descending method for crystal growth: firstly raise the furnace temperature to 1120°C for 12 hours, and keep it warm for 5 hours; gradually lift the downpipe until all the raw materials in the crucible are melted, and then keep it warm for 1 hour; use 0.4mm / h The spe...
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