Transmission electron microscope-based Sample preparation method for observing section grain characteristics of laser-induced crystallized nano-film

Abstract

The invention relates to a transmission electron microscope-based sample preparation method for observing the section grain characteristics of a laser-induced crystallized nano-film. The sample preparation method comprises the following steps: 1, plating a layer of film on a substrate for observing by adopting a transmission electron microscope by using a magnetron sputtering method; 2, oppositely gluing film coated surfaces of two films, fixing, and cutting one part; 3, clamping the cut films by using two plate materials, so that the section is in a gap of the edges of the two plate materials; 4, carrying out single-pulse irradiation on the section by using a laser; and 5, observing one film by flatly putting the film under the transmission electron microscope, wherein the crystallization area at the section edge is the grain growth morphology of a laser irradiated section to be observed. The sample preparation in the invention is carried out without a series of complex methods, such as mounting, grinding of a sample, and ion thinning, and therefore, the process time is greatly shortened; the pollution is very low; furthermore, the reliability of a result is relatively high; and the sample preparation method has the important significance for researching crystallization behaviours of a phase-change material in the thickness direction.

Description

Technical field: [0001] The invention relates to a method for preparing a sample of the cross-sectional grain morphology of a laser-induced crystallization phase-change film material under the observation of a transmission electron microscope. Background technique: [0002] The crystallization process of phase-change thin film materials in rewritable phase-change optical disk storage is of great significance for shortening the erasing and writing time of optical disks. Scholars at home and abroad have not yet unified the understanding of the crystallization mechanism of phase change thin film materials. Since the crystallization process time of laser-induced phase change thin film materials is very short, on the order of picoseconds to nanoseconds, it is often observed by observing the crystallization of phase change thin film materials. The crystallization mechanism of the material can be speculated based on the morphology, structure and morphology characteristics. The cry...

AI Technical Summary

Problems solved by technology

[0003] As mentioned above, the preparation process of the cross-sectional sample by transmission electron microscopy is very complicated, cumbersome and time-consuming, and because the phase change film material is very sensitive to temperature, the thermal effect generated by thermal curing and grinding the sample will affect the internal structure of the material , the sample is easily contaminated, not only the preparation cost is high, but the results are not reliable

[0004] At present, based on the observation of the grain characteristics in the thickness direction of the phase-change nano-film material under the transmission electron microscope, it has only been reported under the condition of isothermal annealing, because the thickness of the laser-induced crystallization phase-change film material itself is at the nanometer level, and it cannot to observe

Images