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A kind of vertical graphene nanoribbon, preparation and application in the preparation of supercapacitor

A graphene nanoribbon and single-walled carbon nanotube technology, applied in the field of carbon nanomaterial preparation, achieves the effects of loose requirements, simplified process and reduced preparation cost

Inactive Publication Date: 2016-10-26
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(Zhang, C.et al.Splitting of a VerticalMultiwalled Carbon Nanotube Carpet to a Graphene Nanoribbon Carpet and Its Use in Supercapacitors.ACS nano 7,5151-5159,(2013).), there is no hot wire CVD treatment to expand single-walled carbon Nanotube array and its supercapacitor report

Method used

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  • A kind of vertical graphene nanoribbon, preparation and application in the preparation of supercapacitor
  • A kind of vertical graphene nanoribbon, preparation and application in the preparation of supercapacitor
  • A kind of vertical graphene nanoribbon, preparation and application in the preparation of supercapacitor

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Embodiment 1

[0039] Embodiment 1: The CVD furnace used in the present invention is a hot wire-CVD furnace.

[0040] (1) Silicon wafers were ultrasonically cleaned with methanol, acetone and isopropanone for 15 minutes, N 2 blow dry. Evaporate 10nm Al sequentially by E-Beam Evaporator 2 o 3 , 0.8nm Fe.

[0041] (2) Set the furnace temperature to 700°C and the gas flow rates to H 2 :200sccm, C 2 h 2 : 1.8 sccm, H through deionized water 2 It is 200sccm, and the total air pressure is 25Torr. The heating wire is a single tungsten wire with a power of 30W. Place the silicon wafer prepared in (1) at 0.4 in front of the tungsten wire, set the power of the tungsten wire to 0 after 30 seconds of reaction, adjust the total air pressure to 6.4 Torr, and complete the vertical array growth of single-walled carbon nanotubes after 15 minutes of reaction.

[0042] (3) Replace a single tungsten wire with 4 tungsten wires, set the furnace temperature to 700°C, and the gas flow to H 2 :200sccm, CH ...

Embodiment 2

[0044] Embodiment 2: The CVD furnace used in the present invention is a hot wire-CVD furnace.

[0045] (1) Silicon wafers were ultrasonically cleaned with methanol, acetone and isopropanone for 15 minutes, N 2 blow dry. Evaporate 11nm Al sequentially by E-Beam Evaporator 2 o 3 , 1nm Fe.

[0046] (2) Set the furnace temperature to 750°C and the gas flow rates to H 2 :210sccm, C 2 h 2 : 2.5 sccm, H through deionized water 2 It is 200sccm, and the total air pressure is 25Torr. The heating wire is a single tungsten wire with a power of 35W. Place the silicon wafer prepared in (1) 0.3 cm in front of the tungsten wire, set the power of the tungsten wire to 0 after 30 s of reaction, adjust the total air pressure to 6.4 Torr, and complete the vertical array growth of single-walled carbon nanotubes after 15 min of reaction.

[0047] (3) Replace a single tungsten wire with 4 tungsten wires, set the furnace temperature to 700°C, and the gas flow to H 2 :200sccm, CH 4 : 0.1 scc...

Embodiment 3

[0049] Embodiment 3: The CVD furnace used in the present invention is a hot wire-CVD furnace.

[0050] (1) Silicon wafers were ultrasonically cleaned with methanol, acetone and isopropanone for 15 minutes, N 2 blow dry. Evaporate 10nm Al sequentially by E-Beam Evaporator 2 o 3 , 1.2nm Fe.

[0051] (2) Set the furnace temperature to 760°C and the gas flow rates to H 2 :210sccm, C 2 h 2 : 2.2 sccm, H through deionized water 2 It is 200sccm, and the total air pressure is 25Torr. The heating wire is a single tungsten wire with a power of 35W. Place the silicon wafer prepared in (1) 0.3 cm in front of the tungsten wire, set the power of the tungsten wire to 0 after 30 s of reaction, adjust the total air pressure to 6.4 Torr, and complete the vertical array growth of single-walled carbon nanotubes after 15 min of reaction.

[0052] (3) Replace a single tungsten wire with 4 tungsten wires, set the furnace temperature to 700°C, and the gas flow to H 2 :210sccm, CH 4 : 0.5 s...

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Abstract

The invention provides a vertical graphene nanoribbon and preparation thereof, and application of the vertical grapheme nanoribbon in preparation of a supercapacitor, belonging to the technical field of preparation of carbon nanomaterials. According to the invention, a silicon wafer is located at a bottom layer; the vertical graphene nanoribbon is arranged on the silicon wafer; and the vertical graphene nanoribbon is prepared from unfolded single-walled carbon nanotubes and stays perpendicular to the silicon wafer. The single-walled carbon nanotubes are allowed to grown vertically on the silicon wafer, and then the single-walled carbon nanotubes are unfolded. The vertical graphene nanoribbon is applied to the supercapacitor.

Description

technical field [0001] The invention belongs to the technical field of carbon nanomaterial preparation, and in particular relates to a method for preparing vertical graphene nanobelts from a vertical array of single-walled carbon nanotubes and using the vertical graphene nanobelts as electrodes to prepare a supercapacitor. Background technique [0002] Supercapacitor (supercapacitor) is also called electrochemical capacitor (Electrochemical capacitor) or double layer capacitor (Electric Double layer capacitor). It is a new type of energy storage element between traditional capacitors and batteries. Compared with traditional capacitors, it has higher capacitance and energy density, and has higher power density and energy density than batteries. With the continuous application of electrochemical supercapacitors in the fields of mobile communications, information technology, aerospace and national defense technology, supercapacitors have attracted more and more attention, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04
Inventor 郭霞范修军李冲刘白刘巧莉董建
Owner BEIJING UNIV OF TECH
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