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A method of manufacturing a light-emitting diode epitaxial wafer

A technology of light-emitting diodes and manufacturing methods, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor crystal quality and poor anti-static ability, and achieve the effects of improving crystal quality, improving anti-static ability and reducing temperature difference

Active Publication Date: 2017-10-27
HC SEMITEK SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of poor crystal quality and poor antistatic ability in the prior art due to concave deformation, an embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer

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  • A method of manufacturing a light-emitting diode epitaxial wafer
  • A method of manufacturing a light-emitting diode epitaxial wafer

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Embodiment 1

[0026] The embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, which is especially suitable for large-scale epitaxial wafers of 4 inches, 6 inches, and 8 inches. See figure 1 , the manufacturing method includes:

[0027] Step 101: growing a buffer layer on a substrate.

[0028] Specifically, the substrate may be a sapphire substrate.

[0029] In practical application, Metal-Organic Chemical Vapor Deposition (MOCVD) method can be used, with trimethyl (or triethyl) gallium as gallium source, high-purity NH3 as nitrogen source, trimethyl Indium is used as an indium source, trimethylaluminum is used as an aluminum source, silane is selected for n-type doping, and magnesocene is selected for p-type doping to realize the manufacturing method of a light-emitting diode epitaxial wafer provided in this embodiment.

[0030] Step 102: growing a non-doped GaN layer on the buffer layer with a growth pressure of 10-200 torr.

[...

Embodiment 2

[0068] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer. This embodiment is a specific implementation of the method for manufacturing a light-emitting diode epitaxial wafer provided in Embodiment 1. Refer to figure 2 , the manufacturing method includes:

[0069] Step 201: growing a buffer layer on a sapphire substrate.

[0070] Step 202: growing a non-doped GaN layer on the buffer layer, the thickness of the non-doped GaN layer is 1.0 μm, and the growth pressure is 10 torr.

[0071] Specifically, the growth rate of the non-doped GaN layer is 2.0 μm / h, and when growing the non-doped GaN layer, the growth rate of the non-doped GaN layer remains unchanged. The flow rate of the Ga source is 200-500 sccm, and when the non-doped GaN layer is grown, the flow rate of the Ga source gradually increases.

[0072] Step 203: growing an N-type GaN layer on the non-doped GaN layer, the thickness of the N-type GaN layer is 1....

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Abstract

The invention discloses a manufacturing method of a light emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The manufacturing method includes: sequentially growing a buffer layer, an undoped GaN layer, an N-type GaN layer, a stress release layer, an active layer, a P-type electron barrier layer and a P-type GaN layer on a substrate, wherein the growth pressure of the undoped GaN layer and the N-type GaN layer is 10-200torr. According to the manufacturing method, the growth pressure of the undoped GaN layer and the N-type GaN layer is limited to be10-200torr, so that the growth speeds of the undoped GaN layer and the N-type GaN layer are slow, and thereby heat can be uniformly transmitted along the growth direction of the epitaxial layer by a basal disc arranged at the bottom of the substrate, temperature difference between the upper and lower surfaces of the epitaxial wafer when the undoped GaN layer and the N-type GaN layer grow is reduced, the concave deformation of the epitaxial wafer is relieved, the temperature of the periphery of the epitaxial wafer can reach required temperature, and the quality of crystals at the periphery of the epitaxial wafer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a light-emitting diode epitaxial wafer. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As a highly influential new product in the emerging industry of information optoelectronics, light-emitting diodes have the characteristics of small size, long service life, colorful colors, and low energy consumption. They are widely used in lighting, display screens, signal lights, backlights, toys and other fields. . [0003] Fabricating epiwafers is an important step in the process of making light-emitting diodes. The existing method for manufacturing an epitaxial wafer of a light-emitting diode includes: sequentially growing a buffer layer, a non-doped GaN layer, an N-type GaN layer, an active layer, and a P-type GaN layer on a substrate. Among them, in order to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/28H01L33/02
CPCH01L33/0075H01L33/02H01L33/32
Inventor 张武斌韩杰周飚胡加辉魏世祯
Owner HC SEMITEK SUZHOU
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