RF (radio frequency) LDMOS (laterally diffused metal oxide semiconductor) device and production method
A device and radio frequency technology, applied in the field of radio frequency LDMOS devices, can solve the problems of complex process, achieve the effect of simplifying the manufacturing process, high breakdown voltage characteristics, and reducing primary metal deposition
Active Publication Date: 2015-05-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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The most notable feature in the figure is the two-layer Faraday ring (G-Shield) 17. This two-layer Faraday ring structure is conducive to a more uniform distribution of the electric field, but in the manufacturing process, the two-layer Faraday ring structure also corresponds to Two times of metal deposition, the process is more complicated
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[0030] The radio frequency LDMOS device described in the present invention, such as Figure 7 As shown, there is a P-type epitaxy 10 on the P-type substrate 1, and the P-type epitaxy 10 has a P-type body region 11, and a heavily doped P-type region 22 located in the P-type body region 11 and the radio frequency the source region 23 of the LDMOS device;
[0031] The P-type epitaxy 10 also has a lightly doped drift region 12, and the lightly doped drift region has a drain region 21 of the LDMOS device;
[0032] The silicon surface between the P-type body region 11 and the lightly doped drift region 12 has a gate oxide 14 and a polysilicon gate 15 covering the gate oxide 14;
[0033] On the side of the P-type body region 11 away from the lightly doped drift region 12, there is a tungsten plug 13 that penetrates the epitaxial layer 10 and its bottom is located on the P-type substrate 1, and the upper end of the tungsten plug 13 is connected to the heavily doped P-type region 22; ...
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The invention discloses an RF (radio frequency) LDMOS (laterally diffused metal oxide semiconductor) device. A body region and an N-type light-doped drift region are formed on a P-type epitaxy of a P-type lining. A Faraday ring in single-layer groove form, formed in the N-type drift region, is imparted an electric field modulation effect equal to that of the double-layer Faraday ring structure, reaching high puncture voltage. The invention further discloses a production method of the RF LDMOS device. The production method includes polycrystalline silicon gate forming, groove etching, drift region infusion, body region and source-drain region forming, oxide layer deposition, Faraday ring forming and the like. Due to the single-layer Faraday ring, metal layer deposition is decreased by one time.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a radio frequency LDMOS device, and the invention also relates to a process method of the radio frequency LDMOS device. Background technique [0002] RF LDMOS (LDMOS: Laterally Diffused Metal Oxide Semiconductor) device is a new generation of integrated solid-state microwave power semiconductor products formed by the integration of semiconductor integrated circuit technology and microwave electronic technology. It has good linearity, high gain, high withstand voltage, and output power. Large size, good thermal stability, high efficiency, good broadband matching performance, easy to integrate with MOS process, etc., and its price is much lower than that of gallium arsenide devices. It is a very competitive power device and is widely used in GSM , PCS, power amplifiers for W-CDMA base stations, as well as wireless broadcasting and nuclear magnetic resonance. [0003] In the design pr...
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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/7835H01L29/404H01L29/66659H01L29/7834H01L29/7816H01L29/0619H01L29/66681
Inventor 慈朋亮石晶胡君李娟娟钱文生刘冬华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP