Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof
A constant-current diode, lateral technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low breakdown voltage, high pinch-off voltage of constant-current diodes, poor constant-current capability, etc., to improve the current Density, protection against adverse effects, the effect of a steep linear region
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[0059] In this embodiment, an SOI-based lateral constant current diode with a withstand voltage of 200V and a current of about 3E-6A / μm is taken as an example to describe the technical solution of the present invention in detail.
[0060] With the help of TSUPREM4 and MEDICI simulation software provided such as figure 2 The process simulation of the SOI-based lateral constant current diode cell structure shown in (b) is carried out. The simulation parameters are: the thickness of the initial silicon wafer is about 250 μm, the N-type lightly doped substrate and the N-type lightly doped silicon on the insulating layer The concentration is 8E14cm -3 ; P-type heavily doped region implant dose is 4E15cm -2 , the implantation energy is 60keV; the implantation dose of N-type heavily doped region is 4E15cm -2 , the implantation energy is 60keV; the channel length is about 6μm; the implantation dose of the P-type doped region is 4E11cm -2 , the implantation energy is 60keV; the dis...
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