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Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof

A constant-current diode, lateral technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low breakdown voltage, high pinch-off voltage of constant-current diodes, poor constant-current capability, etc., to improve the current Density, protection against adverse effects, the effect of a steep linear region

Active Publication Date: 2015-05-20
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems of high pinch-off voltage, low breakdown voltage and poor constant current capability of constant current diodes, the present invention proposes a lateral constant current diode based on SOI and its manufacturing method

Method used

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  • Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof
  • Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof
  • Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof

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Embodiment

[0059] In this embodiment, an SOI-based lateral constant current diode with a withstand voltage of 200V and a current of about 3E-6A / μm is taken as an example to describe the technical solution of the present invention in detail.

[0060] With the help of TSUPREM4 and MEDICI simulation software provided such as figure 2 The process simulation of the SOI-based lateral constant current diode cell structure shown in (b) is carried out. The simulation parameters are: the thickness of the initial silicon wafer is about 250 μm, the N-type lightly doped substrate and the N-type lightly doped silicon on the insulating layer The concentration is 8E14cm -3 ; P-type heavily doped region implant dose is 4E15cm -2 , the implantation energy is 60keV; the implantation dose of N-type heavily doped region is 4E15cm -2 , the implantation energy is 60keV; the channel length is about 6μm; the implantation dose of the P-type doped region is 4E11cm -2 , the implantation energy is 60keV; the dis...

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Abstract

The invention provides a lateral current regulative diode and a manufacturing method thereof and belongs to the technical field of semiconductor power devices. The lateral current regulative diode based on the SOI is formed by connecting a plurality of cell interdigitals with the same structure, wherein each cell comprise a substrate, N-type lightly doped silicon, a P-type heavily doped region, an N-type heavily doped region, a dielectric oxide layer, a metal cathode, a metal anode, a P-type doped region and a buried oxide layer, wherein each P-type heavily doped region is positioned between the corresponding N-type heavily doped region and P-type doped region; each N-type heavily doped region is partially contained in the corresponding P-type heavily doped region; each N-type heavily doped region is in short circuit with the corresponding P-type heavily doped region and forms ohm contact with the corresponding metal cathode; each P-type doped region and the corresponding metal anode form ohm contact. According to the lateral current regulative diode provided by the invention, by the adoption of a PN junction short circuit structure, the area of a chip can be reduced, and the cost is reduced; meanwhile, by the adoption of an SOI technology, adverse influence from leakage current of the substrate in a cluster system can be effectively prevented.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to an SOI-based lateral constant current diode and a manufacturing method thereof. Background technique [0002] The constant current source is a commonly used electronic equipment and device, and it is widely used in electronic circuits. The constant current source is used to protect the entire circuit, even if the voltage is unstable or the load resistance changes greatly, it can ensure the stability of the supply current. A constant current diode (CRD, Current Regulative Diode) is a semiconductor constant current device, that is, a diode is used as a constant current source instead of an ordinary constant current source composed of transistors, Zener tubes and resistors. Currently, constant current diodes The output current is between a few milliamps and tens of milliamperes, which can directly drive the load, achieving the purpose of simple circu...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/06H01L29/66136H01L29/8611
Inventor 乔明于亮亮代刚陈钢张波
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD