Wet-oxygen oxidation method of GaAs-based light emitting diode

A light-emitting diode and wet oxygen oxidation technology, which is applied in the field of optoelectronics, can solve the problems of insufficient DBR oxidation, etc., and achieve the effect of improving oxidation, facilitating operation, and improving lateral oxidation

Active Publication Date: 2015-05-27
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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Problems solved by technology

[0010] Aiming at the problem of insufficient DBR oxidation in the wet oxygen oxidation process of the existing GaAs-based light-emitting diode chips, the present invention proposes a wet oxygen oxidation method for GaAs-based light-emitting diodes with simplified process and convenient operation, so as to improve the lateral oxidation and promote the efficiency of the reaction. keep going

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  • Wet-oxygen oxidation method of GaAs-based light emitting diode

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Embodiment Construction

[0024] The wet oxygen oxidation method of the GaAs-based light-emitting diode of the present invention comprises the following steps:

[0025] (1) Fabricate a layer of SiO on the surface of GaAs-based epitaxial wafer by PECVD 2 Thin film as protective layer, SiO 2 The thickness of the film is about 0.3-0.6 μm. Such as figure 1 As shown, the structure of the GaAs-based epitaxial wafer includes GaAs substrate layer 6, buffer layer 8, DBR layer 5, N-type confinement layer 7, MQW layer (multiple quantum well layer) 4, P-type confinement layer 3 and GaP Layer 2, SiO 2 The protection layer 1 is fabricated on the GaP layer 2 .

[0026] (2) if figure 2 As shown, a half-cut operation is performed on the wafer (GaAs-based epitaxial wafer) in step (1), and the half-cut depth 9 reaches between the Bragg reflection layer (DBR) and the substrate. Depending on different epitaxial structures, the depth can be above 10 μm.

[0027] (3) The wafer in step 2 is subjected to wet oxygen ope...

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Abstract

The invention discloses a wet-oxygen oxidation method of a GaAs-based light emitting diode. The wet-oxygen oxidation method comprises the following steps: (1) manufacturing a layer of SiO2 film as a protecting layer on the surface of a GaAs-based epitaxial wafer; (2) performing semi-cutting operation on the GaAs-based epitaxial wafer; (3) introducing nitrogen into an annealing furnace after passing through a bubble generator, horizontally placing the GaAs-based epitaxial wafer facing the direction of the nitrogen flow in the annealing furnace, wherein the liquid in the bubble generator is deionized water containing H2O2, the mass percentage of H2O2 is 0.5-2%, the temperature of the annealing furnace is set to be 350-400 DEG C, and the oxidation time is 20-30 minutes; (4) corroding SiO2 on the surface of the GaAs-based epitaxial wafer by using hydrofluoric acid, so as to complete wet-oxygen oxidation. According to the wet-oxygen oxidation method, hydrogen peroxide is additionally used in the conventional wet-oxygen oxidation process, so that the oxidation property of the aluminum component can be improved; meanwhile when being in contact with the wafer, hydrogen peroxide can be explosively decomposed into water and oxygen, so that oxygen partial pressure on the surface of the wafer is improved, and the aluminum component can be sufficiently oxidized into A12O3 with a low refractive index.

Description

technical field [0001] The invention relates to a wet oxygen oxidation method for a GaAs-based light-emitting diode, belonging to the field of optoelectronic technology. Background technique [0002] LED (Light Emitting Diode) is the first commercial compound semiconductor to enter the market, and it has been developed for more than 40 years. The earliest LEDs were red GaAsP LEDs made of LPE (liquid phase epitaxial growth) technology, but the performance of these LEDs is relatively low compared to the present. In 1970, after the method of adding nitrogen to GaP and GaAsP was proposed, the performance of LED was improved and LED devices such as green light and orange light other than red light were produced. In the early 1980s, AlGaAs LEDs made by liquid deposition technology had better performance. After the 1990s, due to the introduction of new materials and new epitaxial technology into the research of red LEDs, the GaAs-based AlGaInP LEDs made by metalorganic chemical v...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/10
CPCH01L33/0062H01L33/10
Inventor 彭璐黄博吴向龙徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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