Dual-waveband photoelectric detector and preparation method thereof

A photodetector and dual-band technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of complex materials and preparation processes, and the inability to realize simultaneous and same-position detection, so as to achieve detection, cost saving, and sensitive detection Effect

Inactive Publication Date: 2015-06-10
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

But at present, many products are detected separately by ultraviolet and infrared, and it is impossible to realize simultaneous and same position detection.
However, the dual-wave detection devices in many stud

Method used

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  • Dual-waveband photoelectric detector and preparation method thereof
  • Dual-waveband photoelectric detector and preparation method thereof
  • Dual-waveband photoelectric detector and preparation method thereof

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[0032] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below with reference to the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention.

[0033] The dual-band photodetector of the present invention includes: a semiconductor substrate; an infrared wavelength detection part with ion implanted active area on the semiconductor substrate; an ultraviolet wavelength detection part on the infrared wavelength detection part, and infrared The electrode lead-out electrodes of the wavelength detection part and the ultraviolet wavelength detection part; wherein the ultraviolet wavelength detection part includes: a graphene layer located on the active area of ​​the infrared wavelength detection part; and an ultraviolet...

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Abstract

The invention provides a dual-waveband photoelectric detector and a preparation method thereof. The dual-waveband photoelectric detector comprises a semiconductor substrate, an infrared wavelength detecting part which is positioned on the semiconductor substrate and provided with an active area for ion injection, an ultraviolet wavelength detecting part which is positioned on the infrared wavelength detecting part, and an electrode leading-out pole for the infrared wavelength detecting part and the ultraviolet wavelength detecting part. The ultraviolet wavelength detecting part comprises a graphene layer which is positioned on the active area of the infrared wavelength detecting part, an ultraviolet sensitive quantum dot layer which covers the graphene layer. According to the dual-waveband photoelectric detector disclosed by the invention, infrared and ultraviolet dual-waveband detection can be performed, and the infrared wavelength detecting part and the ultraviolet wavelength detecting part are integrated, so that the process steps are simplified, and the cost is reduced; moreover, the graphene and the ultraviolet sensitive quantum dots are utilized as the ultraviolet wavelength photosensitive materials, and the forbidden band of the quantum dot can be regulated according to the dimension of the quantum dot and is quick in response speed, so that the ultraviolet waveband detection is adjustable and relatively sensitive.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a dual-band photodetector and a preparation method thereof. Background technique [0002] A photodetector is a device that converts light signals into electrical signals to detect materials. Photodetectors are widely used in various fields of military and national economy. In the ultraviolet or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. Another application of the photoconductor is to use it as the target surface of the camera tube. The principle of the photodetector is that the conductivity of the irradiated material is changed by radiation, which utilizes the photoconductive effect of the semiconductor material. When the irradiated photon energy hv is equal to or greater than ...

Claims

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Application Information

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IPC IPC(8): H01L31/0264H01L31/101H01L31/18
Inventor 胡少坚陈寿面尚恩明
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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