Dual-waveband photoelectric detector and preparation method thereof

Abstract

The invention provides a dual-waveband photoelectric detector and a preparation method thereof. The dual-waveband photoelectric detector comprises a semiconductor substrate, an infrared wavelength detecting part which is positioned on the semiconductor substrate and provided with an active area for ion injection, an ultraviolet wavelength detecting part which is positioned on the infrared wavelength detecting part, and an electrode leading-out pole for the infrared wavelength detecting part and the ultraviolet wavelength detecting part. The ultraviolet wavelength detecting part comprises a graphene layer which is positioned on the active area of the infrared wavelength detecting part, an ultraviolet sensitive quantum dot layer which covers the graphene layer. According to the dual-waveband photoelectric detector disclosed by the invention, infrared and ultraviolet dual-waveband detection can be performed, and the infrared wavelength detecting part and the ultraviolet wavelength detecting part are integrated, so that the process steps are simplified, and the cost is reduced; moreover, the graphene and the ultraviolet sensitive quantum dots are utilized as the ultraviolet wavelength photosensitive materials, and the forbidden band of the quantum dot can be regulated according to the dimension of the quantum dot and is quick in response speed, so that the ultraviolet waveband detection is adjustable and relatively sensitive.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a dual-band photodetector and a preparation method thereof. Background technique [0002] A photodetector is a device that converts light signals into electrical signals to detect materials. Photodetectors are widely used in various fields of military and national economy. In the ultraviolet or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. Another application of the photoconductor is to use it as the target surface of the camera tube. The principle of the photodetector is that the conductivity of the irradiated material is changed by radiation, which utilizes the photoconductive effect of the semiconductor material. When the irradiated photon energy hv is equal to or greater than ...

AI Technical Summary

Problems solved by technology

But at present, many products are detected separately by ultraviolet and infrared, and it is impossible to realize simultaneous and same position detection.

However, the dual-wave detection devices in many studies often use two compound semiconductor materials with different direct band gaps to detect infrared and ultraviolet light waves respectively, and the materials and preparation processes are very complicated.

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