Dual-waveband photoelectric detector and preparation method thereof

A photodetector and dual-band technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of complex materials and preparation processes, and the inability to realize simultaneous and same-position detection, so as to achieve detection, cost saving, and sensitive detection Effect

Inactive Publication Date: 2015-06-10

SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT

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Problems solved by technology

But at present, many products are detected separately by ultraviolet and infrared, and it is impossible to realize simultaneous and same position detection.

However, the dual-wave detection devices in many stud...

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Method used

In summary, dual-band photodetector of the present invention and preparation method thereof, by integrating infrared wavelength detection part and ultraviolet wavelength detection part, simplify process step, save cost; And, utilize graphene And ultraviolet-sensitive quantum dots are used as ultraviolet wavelength photosensitive materials. Because the forbidden band width of quantum dots can be adjusted with the size of quantum dots and the characteristics of fast response speed, the detection of ultraviolet bands is adjustable and more sen...

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Abstract

The invention provides a dual-waveband photoelectric detector and a preparation method thereof. The dual-waveband photoelectric detector comprises a semiconductor substrate, an infrared wavelength detecting part which is positioned on the semiconductor substrate and provided with an active area for ion injection, an ultraviolet wavelength detecting part which is positioned on the infrared wavelength detecting part, and an electrode leading-out pole for the infrared wavelength detecting part and the ultraviolet wavelength detecting part. The ultraviolet wavelength detecting part comprises a graphene layer which is positioned on the active area of the infrared wavelength detecting part, an ultraviolet sensitive quantum dot layer which covers the graphene layer. According to the dual-waveband photoelectric detector disclosed by the invention, infrared and ultraviolet dual-waveband detection can be performed, and the infrared wavelength detecting part and the ultraviolet wavelength detecting part are integrated, so that the process steps are simplified, and the cost is reduced; moreover, the graphene and the ultraviolet sensitive quantum dots are utilized as the ultraviolet wavelength photosensitive materials, and the forbidden band of the quantum dot can be regulated according to the dimension of the quantum dot and is quick in response speed, so that the ultraviolet waveband detection is adjustable and relatively sensitive.

Application Domain

Semiconductor devices

Technology Topic

Quantum dotElectrical conductor +7

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Examples

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[0032] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below with reference to the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention.

[0033] The dual-band photodetector of the present invention includes: a semiconductor substrate; an infrared wavelength detection part with ion implanted active area on the semiconductor substrate; an ultraviolet wavelength detection part on the infrared wavelength detection part, and infrared The electrode lead-out electrodes of the wavelength detection part and the ultraviolet wavelength detection part; wherein the ultraviolet wavelength detection part includes: a graphene layer located on the active area of the infrared wavelength detection part; and an ultraviolet sensitive quantum dot layer covering the graphene layer.

[0034] It should be noted that in the present invention, depending on the structure adopted by the infrared wavelength detection part, the position of the electrode lead-out is also different. For example, the electrode lead-out of the infrared wavelength detection part is located on the active area and at the bottom of the semiconductor substrate. ; The electrode lead-out of the ultraviolet wavelength detection part is located on the graphene layer. The graphene layer can be grown on another substrate and then transferred to the infrared wavelength detection part. The specific transfer method can be an existing method; the ultraviolet sensitive quantum dots used can be selected according to the actual required ultraviolet band. Ultraviolet sensitive quantum dots will inevitably enter the graphene layer. However, this will not affect the technical effect of the present invention, which belongs to the scope of the present invention. The infrared wavelength detection part is a silicon photodiode, a compound semiconductor transistor, or a superlattice device.

[0035] The following is attached Figure 1-3 The dual-band photodetector and the preparation method thereof of the present invention are further described in detail with specific embodiments. It should be noted that the drawings all adopt a very simplified form and use non-precise proportions, and are only used to facilitate and clearly achieve the purpose of assisting the description of this embodiment.

[0036] See figure 1 In an embodiment of the present invention, the dual-band photodetector includes:

[0037] A semiconductor substrate 101 at the bottom; the substrate can be a silicon substrate or a compound semiconductor substrate;

[0038] The infrared wavelength detection part includes an active region 102 with ion implantation on the semiconductor substrate;

[0039] The ultraviolet wavelength detection part is located on the active area 102 of the infrared wavelength detection part, and includes: a graphene layer 104 located on the active area 102 of the infrared wavelength detection part; an ultraviolet sensitive quantum dot layer covering the graphene layer 104 105. The ultraviolet sensitive quantum dots can be ZnS or ZnO quantum dots.

[0040] And the electrode lead-out electrodes 103 located on the active area 102, and the electrode lead-out electrodes 106 located at both ends of the graphene layer 104.

[0041] See figure 2 In another comparative embodiment of the present invention, in the dual-band photodetector, the infrared wavelength detection part is an InGaAs short-wave infrared diode; it includes:

[0042] An InP semiconductor substrate 201;

[0043] Infrared wavelength detection part, including N located on the surface of semiconductor substrate 201 + -InP buffer layer 202, N on the surface of buffer layer 202 - -In 0.53 Ga 0.47 As active area 203, N on the surface of active area 203 - -InP protective layer 204, Zn diffusion region 205 located in the protective layer 204 and active region 203, and Si located on the surface of the protective layer 204 3 N 4 Isolation layer 206; the active region material of InGaAs short-wave infrared diode is In 0.53 Ga 0.47 As, band gap is 0.75eV, cut-off wavelength is 1.7um.

[0044] The ultraviolet wavelength detection part includes: a graphene layer 207 located on the isolation layer 206; a ZnO ultraviolet sensitive quantum dot layer 208 covering the graphene layer 207, and electrode extraction electrodes 209 located at both ends of the graphene layer 207;

[0045] The electrode lead-out electrode of the infrared wavelength detection part includes the Au/Zn positive electrode lead-out electrode 210 on the surface of the diffusion zone and the Au/Ge negative electrode lead-out electrode 211 at the bottom of the semiconductor substrate 201; the Ti/Au electrode lead-out electrode 212 of the ultraviolet wavelength detection part Located on the graphene layer 207.

[0046] See image 3 In an embodiment of the present invention, the preparation method of the dual-band photodetector is described by taking the preparation of the dual-band photodetector in another comparative embodiment mentioned above as an example, and includes the following steps:

[0047] Step 01: forming an active area on the semiconductor substrate;

[0048] Specifically, the MOCVD method can be used to sequentially form on the InP semiconductor substrate: N + -InP buffer layer, thickness about 1.2 microns; N - -In 0.53 Ga 0.47 As active area, the thickness is about 3.5 microns; N - -InP protective layer, thickness about 1.5 microns, and Si 3 N 4 film.

[0049] Step 02: Perform ion implantation on the active area;

[0050] Specifically, photoresist is coated on the isolation layer, and part of Si is removed by photolithography and etching. 3 N 4 Thin film, exposing part of the protective layer; performing a Zn ion diffusion process into the exposed part of the protective layer to form a Zn diffusion zone located in the protective layer and the active area; then, in the Si 3 N 4 Deposit another layer of Si on the film 3 N 4 Thin film to form an isolation layer; the isolation layer protects the infrared wavelength detection part.

[0051] Step 03: Transfer the graphene film to the active area to form a graphene layer;

[0052] Specifically, the graphene single-layer film can be grown on the copper film by the CVD method, and then transferred to the isolation layer;

[0053] Step 04: Coating an ultraviolet-sensitive quantum dot layer on the surface of the graphene layer;

[0054] Specifically, the spin coating method can be used to coat ZnO quantum dots on the graphene layer, and a liquid containing ZnO quantum dots, such as a toluene solution, can be spin-coated on the surface of the graphene layer. After the ZnO quantum dot solution is cured into a film, ZnO quantum dots can be formed. Point layer.

[0055] Step 05: Etch the graphene layer/ultraviolet sensitive quantum dot layer to form an ultraviolet wavelength detection part;

[0056] Specifically, first, photoresist is coated on the semiconductor substrate after step 04; then, the graphene layer and the ultraviolet sensitive quantum dot layer are etched through photolithography and etching processes to obtain the desired graphene layer/ Ultraviolet sensitive quantum dot layer structure.

[0057] Step 06: Form the electrode lead-out of the infrared wavelength detection part and the ultraviolet wavelength detection part.

[0058] Specifically, the electrode lead-out electrode of the infrared wavelength detection part is formed on the active area and the bottom of the semiconductor substrate; the electrode lead-out electrode of the ultraviolet wavelength detection part is formed on the graphene layer.

[0059] In summary, the dual-band photodetector and preparation method of the present invention simplify the process steps and save costs by integrating the infrared wavelength detection part and the ultraviolet wavelength detection part; and the use of graphene and ultraviolet sensitive Quantum dots are used as ultraviolet wavelength photosensitive materials. Because the band gap of quantum dots can be adjusted with the size of quantum dots and the characteristics of fast response speed, the detection of the ultraviolet band is adjustable and more sensitive; when the infrared wavelength is irradiated on the device Most of the infrared light waves will penetrate the graphene layer and the quantum dot layer, and will be absorbed by the infrared wavelength detection part below it, so as to realize the detection of the infrared band; when the ultraviolet light wave irradiates the device, it will be absorbed by the quantum dot layer , Generating electrons to cause changes in graphene resistance and current, thereby realizing the detection of ultraviolet bands

[0060] Although the present invention has been disclosed as above in the preferred embodiments, the embodiments are only examples for convenience of description, and are not intended to limit the present invention. Those skilled in the art can do so without departing from the spirit and scope of the present invention. For some changes and modifications, the scope of protection claimed by the present invention should be subject to the claims.

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Classification and recommendation of technical efficacy words

The process steps are simple
Low cost

Dual-waveband photoelectric detector and preparation method thereof

AI-Extracted Technical Summary

Problems solved by technology

Method used

Abstract

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Examples

Example Embodiment

PUM

Description & Claims & Application Information

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