Dual-waveband photoelectric detector and preparation method thereof
A photodetector and dual-band technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of complex materials and preparation processes, and the inability to realize simultaneous and same-position detection, so as to achieve detection, cost saving, and sensitive detection Effect
Inactive Publication Date: 2015-06-10
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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The invention provides a dual-waveband photoelectric detector and a preparation method thereof. The dual-waveband photoelectric detector comprises a semiconductor substrate, an infrared wavelength detecting part which is positioned on the semiconductor substrate and provided with an active area for ion injection, an ultraviolet wavelength detecting part which is positioned on the infrared wavelength detecting part, and an electrode leading-out pole for the infrared wavelength detecting part and the ultraviolet wavelength detecting part. The ultraviolet wavelength detecting part comprises a graphene layer which is positioned on the active area of the infrared wavelength detecting part, an ultraviolet sensitive quantum dot layer which covers the graphene layer. According to the dual-waveband photoelectric detector disclosed by the invention, infrared and ultraviolet dual-waveband detection can be performed, and the infrared wavelength detecting part and the ultraviolet wavelength detecting part are integrated, so that the process steps are simplified, and the cost is reduced; moreover, the graphene and the ultraviolet sensitive quantum dots are utilized as the ultraviolet wavelength photosensitive materials, and the forbidden band of the quantum dot can be regulated according to the dimension of the quantum dot and is quick in response speed, so that the ultraviolet waveband detection is adjustable and relatively sensitive.
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