Motor closed-loop control magnetron sputtering planar cathode device

Abstract

The motor closed-loop control magnetron sputtering planar cathode device includes a planar magnetron cathode module, a control motor module and a closed-loop control module; the planar magnetron cathode module includes a magnetic circuit module and a target; the control motor module includes a motor, a motor drive module and an encoding module The motor drive module is connected to the motor and the encoding module respectively, and the sputtering power signal of the sputtering cathode of the planar magnetron cathode module is collected through the closed-loop control module as a feedback signal, and the encoding module encodes the feedback signal as the motor drive module to drive the motor to rotate The control signal can therefore control the rotation speed and direction of the motor, so that the distance between the magnetic circuit module connected to the motor and the target surface remains dynamically constant within the life cycle of the target. Therefore, it is possible to overcome the process parameter drift caused by target etching during the target sputtering life cycle of the existing magnetron sputtering planar cathode, so as to eliminate the influence on the film structure performance during the process debugging and development.

Description

technical field [0001] The invention relates to a magnetron sputtering planar cathode device, in particular to a motor closed-loop control magnetron sputtering planar cathode device. Background technique [0002] Magnetron sputtering technology is currently one of the most important vacuum coating physical vapor deposition PVD (Physical VaporDeposition, vacuum ion plating) technologies. The working principle of magnetron sputtering is that electrons collide with argon atoms in the process of flying to the substrate under the action of electric field E, so that they are ionized to produce Ar positive ions and new electrons; new electrons fly to the substrate, Ar ions are accelerated to the cathode target under the action of an electric field, and bombard the target surface with high energy to cause sputtering of the target. In sputtering particles, neutral target atoms or molecules are deposited on a substrate to form a thin film. [0003] As the core device of the magnetro...

AI Technical Summary

Problems solved by technology

[0004] With the etching of the sputtering target, the distance between the surface of the magnetic steel in the sputtering cathode and the actual surface of the target gradually decreases, so the magnetic field of the target surface also gradually changes, which immediately affects the sputtering glow plasma, resulting in sputtering The voltage and current also change slowly with time, which affects the structural properties of the film

This drift of process parameters during the target sputtering life cycle affects the stability and repeatability of the coating process in production on the one hand, and on the other hand makes it difficult to distinguish the effects of different process parameters on the structural properties of the film in process debugging and research and development. independent influence

[0005] At present, the existing closed-loop control magnetron cathode system is mainly used in the reactive sputtering system, using the target voltage, oxygen partial pressure or glow spectrum signal as the input signal, connected to the closed-loop control, and then fed back to the gas flowmeter, through Automatically adjust the reaction gas to stabilize the glow state of magnetron sputtering, such as stabilizing the target voltage at a constant voltage, etc., but essentially cannot eradicate the drift caused by target etching, even if the constant voltage is maintained, but in essence The state of the initial atmosphere of the reactive gas has changed

Also, this method is not effective for non-reactive sputtering

Images