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Wafer bonding detection structure, preparation method and detection method

A detection structure, wafer bonding technology, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of unusable devices, inability to fully reflect the bonding quality of the entire wafer, destructive testing, etc. , to achieve the effect of covering a wide area

Active Publication Date: 2016-09-21
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sampling points are limited and cannot fully reflect the bonding quality of the entire wafer (Wafer).
[0007] Therefore, with the development of technology, the technology of bonding two wafers will be applied in the preparation process of MEMS devices and other devices, but there are various problems in the detection of the bonding quality between the wafers, one is destructive Second, due to the limitation of sampling, the entire wafer cannot be effectively monitored during the sampling process, so it is necessary to improve the current detection structure and detection method to eliminate the above problems

Method used

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  • Wafer bonding detection structure, preparation method and detection method
  • Wafer bonding detection structure, preparation method and detection method
  • Wafer bonding detection structure, preparation method and detection method

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Embodiment 1

[0062] Figure 2e It is a structural schematic diagram of the test structure in a specific embodiment of the present invention, wherein Figure 2e The figure on the right is a partial enlarged view of the marked area in the figure on the left;

[0063] The test structure includes a bond between two wafers, wherein the lower one is a wafer forming MEMS components, and the wafer includes a semiconductor substrate (not shown in the figure), and the semiconductor Various materials commonly used in this field can be selected, and various devices, such as various CMOS devices, etc., are also formed in the semiconductor substrate, so that the CMOS process and the MEMS process will be combined to form a CMEMS process, and the formed Both the device and the forming method can be designed and manufactured as required, and will not be repeated here.

[0064] The test structure also includes a MEMS substrate 204 on which MEMS components are formed, wherein the type of the MEMS component...

Embodiment 2

[0081] The present invention also provides a method for selecting the above-mentioned test structure to detect the quality of wafer bonding. In the method, the resistance test device is connected to the interconnection metal layer 205 through the probe of WAT, and the voltage is applied The resistance value is measured in the case where the current flows as image 3 As shown, the current enters the joint interface in the figure through the interconnected metal layer at one end of the MEMS substrate 204, and then enters the conductive material layer 203 through the joint interface, and after flowing through the conductive material layer 203 Enter the bonding interface at the other end, finally to the interconnection metal layer at the other end in the MEMS substrate 204, then connect to the resistance testing device through the probe of WAT, the resistance tested in this process is the interconnection metal layer 205 , the bonding interface and the conductive material layer 203...

Embodiment 3

[0089] In the present invention, the test structure is realized by changing the manufacturing process flow of the MEMS device without affecting the device structure, so the test structure changes the destructive test in the prior art.

[0090] Attached below Figure 2a-2e The preparation method of the test structure described in the present invention is further described.

[0091] Firstly, step 201 is executed, a semiconductor substrate 201 is provided, and an isolation layer 202 is formed on the semiconductor substrate 201 .

[0092] Specifically, refer to Figure 2a , the semiconductor substrate 201 can be selected from commonly used semiconductor materials in the field, and in this embodiment, the semiconductor substrate 201 is selected from silicon.

[0093] Wherein, the isolation layer 202 can be selected from commonly used insulating materials in the field, such as SiO 2 , SiN, carbon-doped silicon oxide (SiOC), or silicon carbonitride (SiCN), etc. Alternatively, a t...

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Abstract

The invention relates to a detection structure for wafer bonding, a preparation method and a detection method. The detection structure comprises an MEMS (Micro-Electro-Mechanical System) substrate and a cap layer, wherein an MEMS component is formed on the MEMS substrate, and interconnection metal layers are formed on the two sides of the MEMS component; the cap layer comprises raised connecting ends arranged on the two ends, and a groove located between the connecting ends; each connecting end comprises a connecting end body and a conductive material layer located on the corresponding connecting end body, wherein the conductive material layers are also formed on the bottom and the sidewall of the groove; the cap layer and the MEMS substrate are integrally jointed through the connecting ends and the interconnection metal layers; and a joint interface is formed on a joint of each connecting end and the corresponding interconnection metal layer. The detection structure has the advantages that (1) a device (Device) cannot be destroyed and can be packaged and used continuously after detection; and (2) the detection structure has no impact on the device thanks to the change of a process flow (Process Flow).

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular, the present invention relates to a detection structure, preparation method and detection method for wafer bonding. Background technique [0002] With the continuous development of semiconductor technology, smartphones, integrated CMOS and micro-electromechanical systems (MEMS) devices have increasingly become the most mainstream and advanced technologies in the market for motion sensor products, and with technology updates , the development direction of this type of transmission sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Among them, MEMS pressure sensors are widely used in automotive electronics: such as TPMS, engine oil pressure sensor, air pressure sensor of automobile brake system, automobile engine intake manifold pressure sensor (TMAP), diesel common rail pressure sensor; consumer electronics: such as tire pressure Meter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81C1/00
Inventor 郑超骆凯玲刘炼
Owner SEMICON MFG INT (SHANGHAI) CORP
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