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Epitaxial structure of gallium nitride LED

A technology of light-emitting diodes and epitaxial structures, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as affecting luminous efficiency, increasing current density, and inability to completely solve them, and achieve improved luminous efficiency, average blocking effect, and uniformity of light emission. improved effect

Inactive Publication Date: 2015-07-22
广西钦州市易通浩光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The difference in the mobility of electrons and holes causes a large number of electrons to cross the active region and enter the P-type doped region to recombine with holes, which affects the luminous efficiency
[0004] The design of many epitaxial structures adds a buffer layer for current expansion before the active region to alleviate the difference in electron-hole mobility, but it cannot completely solve the problem.
Especially for high-power LED chips, due to the increase of current density, the luminous efficiency drops significantly, and this problem needs to be solved urgently

Method used

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  • Epitaxial structure of gallium nitride LED
  • Epitaxial structure of gallium nitride LED
  • Epitaxial structure of gallium nitride LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1 of the epitaxial structure of the gallium nitride light-emitting diode is as figure 1 As shown, it includes sapphire substrate 1, gallium nitride two-dimensional crystal layer 2, non-doped gallium nitride layer 3, N-type gallium nitride doped layer 4, 5 periods of lower quantum well structure 5, 2 periods The buffer insertion layer 6, the upper quantum well structure 7 of 4 periods and the P-type gallium nitride doped layer 8.

[0023] The lower quantum well structure 5 of this example is as figure 2 As shown, there are 5 periods, and each period includes a gallium nitride barrier layer 51 and an indium gallium nitride well layer 52 . Each period of the upper quantum well structure 7 is the same as each period of the lower quantum well structure 5 .

[0024] The buffer insert layer 6 in this example is as image 3 As shown, there are 2 periods, and the buffer insertion layer of each period includes a P-type gallium nitride doped layer 61, a P-type indiu...

Embodiment 2

[0029] For ease of comparison, the substrate 1, gallium nitride two-dimensional crystal layer 2, non-doped gallium nitride layer 3, N-type gallium nitride doped layer 4 and P-type gallium nitride doped layer 8 of this example are the same as those in the embodiment 1 is the same.

[0030] The lower quantum well structure 5 of this example is 4 periods, each period includes a gallium nitride barrier layer 51 and an indium gallium nitride well layer 52, the upper quantum well structure 7 is 1 period, and the lower quantum well structure A cycle is the same.

[0031] The buffer insertion layer 6 in this example is one period, including a P-type GaN doped layer 61 , a P-type InGaN doped layer 62 and an N-type GaN doped layer 63 .

[0032] Wherein the P-type gallium nitride doped layer 61 has a thickness of 50nm, is doped with magnesium Mg, and has a doping concentration of 50×10 17 / cm 3 ;

[0033] In this example, a P-type InGaN doped layer 62 of the buffer insertion layer 6 ...

Embodiment 3

[0037] The substrate 1 , gallium nitride two-dimensional crystal layer 2 , non-doped gallium nitride layer 3 , n-type gallium nitride doped layer 4 and p-type gallium nitride doped layer 8 in this example are the same as those in the first embodiment.

[0038] The lower quantum well structure 5 of this example is 10 periods, and each period includes a gallium nitride barrier layer 51 and an indium gallium nitride well layer 52, and the upper quantum well structure 7 is 8 periods, and each period is connected with the lower quantum well structure. One period of the well structure 5 is the same.

[0039] The buffer insertion layer 6 in this example has three periods, and each period includes a P-type GaN doped layer 61 , a P-type InGaN doped layer 62 and an N-type GaN doped layer 63 . Each cycle of the buffer insertion layer 6 is the same.

[0040] Wherein the P-type gallium nitride doped layer 61 has a thickness of 30 nm, is doped with magnesium Mg, and has a doping concentrat...

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Abstract

The invention relates to an epitaxial structure of a gallium nitride LED. A buffer insert layer is inserted into a multi-period quantum well structure; the buffer insert layer of M, 1 to 5, periods is provided above the lower quantum well structure of N, 4 to 10, periods; the upper quantum well structure of n, 1 to 8, periods is provided above the buffer insert layer; n> / =(N+n) / 2; each period of the buffer insert layer includes one of a P-type gallium nitride doped layer, a P-type indium gallium nitride doped layer and an N-type gallium nitride doped layer; magnesium is doped into the P-type gallium nitride doped layer and the P-type indium gallium nitride doped layer, and silicon is doped into the N-type gallium nitride doped layer; the total thickness of the buffer insert layer is 35nm to 675nm. The buffer insert layer prevents electrons from crossing an active area and entering the P-type doped area to combine with holes, luminous efficiency is improved and continuously increases, up to 55%, if the current density increases to above 250nA; luminous uniformity of the LED is improved; the epitaxial structure is easy to popularize and apply.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial structure of a gallium nitride light emitting diode. Background technique [0002] LED, that is, semiconductor light-emitting diode, has the characteristics of high luminous efficiency, long life, small size and rich colors, and has been widely used. Gallium nitride light-emitting diodes are typical representatives, including epitaxial structures and electrodes disposed on the epitaxial structures. The epitaxial structure of the existing gallium nitride light-emitting diodes includes a substrate, an N-type layer, multiple quantum well layers and a P-type layer grown on the substrate in sequence, [0003] Semiconductor light-emitting diodes emit light by radiative recombination of electrons and holes in the active region sandwiched between the N-type doped region and the P-type doped region in the epitaxial structure. Generally, the mobility of electrons is m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/14
CPCH01L33/06H01L33/145H01L33/32
Inventor 于浩
Owner 广西钦州市易通浩光电科技有限公司
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