Yttrium-iron-garnet single-crystal film and preparation method thereof

Abstract

The present invention provides an yttrium-iron-garnet single-crystal film and a liquid-phase epitaxy preparation method thereof, and belongs to the field of electronic materials. According to the present invention, the component of the yttrium-iron-garnet single-crystal film is La[x]Y[3-x]Fe5O12, wherein x is 0.01-0.05; 0.44% by mass of Y2O3, 10.31% by mass of Fe2O3, 0.06% by mass of La2O3, 87.44% by mass of PbO and 1.75% by mass of B2O3 are adopted as raw materials; the liquid-phase epitaxy method is used to grow the single-crystal film; the ferromagnetic resonance line width of the obtained yttrium-iron-garnet single-crystal film is narrow and achieves less than or equal to 1 Oe; and the roughness, the lattice matching, the film stress, the lead content, the impure phase and the like of the film are improved.

Description

technical field

[0001] The invention belongs to the field of electronic materials, in particular to a liquid phase epitaxy preparation method of yttrium iron garnet (YIG) single crystal thin film. Background technique

[0002] Yttrium iron garnet (YIG) thin films have excellent low-loss transmission properties in the microwave region, and thus are considered to be a promising material in both high-performance nonreciprocal devices and microwave devices. The yttrium iron garnet film is the carrier material of the magnetostatic wave, which can be applied to the magnetostatic wave device. In order to ensure good microwave performance, on the one hand, the carrier material yttrium iron garnet film is required to have sufficient thickness, generally in the order of microns; On the one hand, the carrier material yttrium iron garnet film is required to have as small an inherent loss as possible under the premise of ensuring power capacity, and the transmission loss is proportional ...

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