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A method for improving the photoelectric conversion efficiency of quantum dot-sensitized solar cells

A solar cell and quantum dot sensitization technology, which is applied in the field of solar cells, can solve problems such as unfavorable large-scale production, complicated operation methods, and harsh experimental conditions, and achieve suppression of carrier luminescent recombination, low reaction temperature, and high photoelectric conversion efficiency. Improved effect

Inactive Publication Date: 2017-11-07
JILIN NORMAL UNIV
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Problems solved by technology

However, in order to ensure the crystalline quality of the ZnS barrier layer and precisely control the thickness of the layer, people often need to use growth methods such as molecular beam epitaxy and chemical vapor deposition. The experimental conditions are harsh, the operation method is complicated, and the cost is high, which is not conducive to large-scale production.

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Embodiment Construction

[0015] A method for improving the light conversion efficiency of a quantum dot sensitized solar cell includes the following steps:

[0016] ① Preparation of zinc oxide nanorod array: ZnO nanorods are prepared by a two-step chemical water bath deposition method, that is, a ZnO seed layer is deposited on an ITO glass substrate by a zinc acetate solution spin coating method, and then the seed layer is lined The bottom is placed in a beaker of a mixed solution of zinc nitrate and hexamethylene tetramine, the molar ratio of zinc nitrate and hexamethylene tetramine is 1:1, and the inclination angle of the substrate with the seed layer and the bottom of the beaker is 45 ~70 o , And then keep the beaker in a constant temperature drying oven at 93°C for 6 hours to grow ZnO nanorod arrays to prepare an ITO glass substrate with ZnO nanorod arrays;

[0017] ②, deposition of organic self-assembled monolayer film (SAMs film): at 30 o Prepare 20 mL of the original SAMs solution with a molar conce...

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Abstract

The invention belongs to the technical field of solar cells, and specifically relates to a method for improving the photoelectric conversion efficiency of quantum dot-sensitized solar cells. The method uses a soaking method to modify a layer of dense organic self-assembled molecular layer on the surface of the ZnO nanorod array photoanode (SAMs), specifically including the following steps: ①, preparation of zinc oxide nanorod arrays; ②, deposition of organic self-assembled monolayer film (SAMs film); ③, deposition of CdS quantum dot sensitization layer; ④, assembly of solar cells. The method of the invention effectively realizes the modification of the interface between the ZnO photoanode and the CdS quantum dot, improves the photoelectric conversion efficiency of the battery, and at the same time, the method is simpler to operate, has low reaction temperature and low cost, and is favorable for large-scale production.

Description

Technical field [0001] The invention belongs to the technical field of solar cells, and specifically relates to a method for improving the photoelectric conversion efficiency of a quantum dot-sensitized solar cell. Background technique [0002] Due to the energy crisis, solar cells are highly valued by the market. Among them, quantum dot sensitized solar cells (QDSSCs) have the most potential for development, because theoretical research results show that QDSSCs can achieve a photoelectric conversion efficiency of up to 66%, but in experiments, QDSSCs The actual conversion efficiency is still very low. In order to improve the efficiency of the battery, people generally use three methods, that is, to improve the crystal quality of the material, the use of composite light-absorbing materials and interface treatment. The interface processing is a fundamental and critical issue for improving battery efficiency. For CdS quantum dot-sensitized ZnO-based solar cells, the most commonly...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042
Inventor 杨丽丽陈钢孙云飞栾红梅高铭杨景海
Owner JILIN NORMAL UNIV