High Mobility, High Stability Metal Oxide Thin Film Transistor and Its Fabrication Process
An oxide thin film, high stability technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of reduced stability, the inability to achieve high mobility and high stability at the same time, and the inability to have high mobility at the same time and high stability characteristics to achieve the effect of reducing the number of defect states
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0042] Taking the back channel etched metal oxide thin film transistor as an example, a high mobility and high stability metal oxide thin film transistor, such as figure 1 As shown, a gate 02 , a gate insulating layer 03 , an active layer, a source-drain electrode 05 and a passivation layer 06 are sequentially disposed on a substrate 01 .
[0043] Wherein, the active layer is composed of a sub-active layer and a semiconductor protection layer. The sub-active layer is composed of a carrier isolation layer 041, a carrier transport layer 042 and a semiconductor protection layer 043. The carrier isolation layer 041, Both the carrier transport layer 042 and the semiconductor protection layer 043 are amorphous metal oxide films, the carrier isolation layer 041 is deposited on the gate insulating layer 03, and the carrier transport layer 042 is deposited on the carrier isolation layer 041 Above, a semiconductor protection layer 043 is deposited on the carrier transport layer 042 .
[...
Embodiment 2
[0054] A high-mobility, high-stability metal oxide thin film transistor, other structures are the same as in Embodiment 1, the difference lies in: the materials constituting the carrier isolation layer 041, the carrier transport layer 042 and the semiconductor protective layer 043 The elements are the same. It should be noted that the materials of the carrier isolation layer 041 , the carrier transport layer 042 and the semiconductor protection layer 043 referred to in this embodiment have the same elements, but the content of each element is different. Those skilled in the art can set the required preparation conditions (such as: sputtering atmosphere, sputtering power, and sputtering time, etc.) according to the carrier concentration requirements, which will not be repeated here.
Embodiment 3
[0056] The preparation process of the high-mobility, high-stability metal oxide thin film transistor as in Example 1 includes the following steps:
[0057] The preparation process of the active layer is to sequentially deposit the carrier isolation layer 041 and the carrier transport layer 042 of each sub-layer on the gate insulating layer 03, and etch the deposited sub-active layer.
[0058] Preferably, the preparation of the active layer further includes depositing a semiconductor protection layer 043 on the topmost sub-active layer, and etching the deposited semiconductor protection layer.
[0059] Wherein, the carrier isolation layer 041 , the carrier transport layer 042 and the semiconductor protection layer 043 are respectively amorphous metal oxide thin films doped with at least one element of lanthanide or IVB group elements.
[0060] Specifically, the carrier isolation layer 041 is made of an amorphous metal oxide containing one or more elements of indium, gallium, al...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More