Floating gate memory based on metal heterogeneous quantum dots and preparation method therefor

Abstract

The invention relates to a floating gate memory based on metal heterogeneous quantum dots and a preparation method therefor. The floating gate memory based on metal heterogeneous quantum dots comprises a semiconductor substrate. The semiconductor substrate is provided with a tunneling layer. The tunneling layer is provided with a silver / gold heterogeneous quantum dot thin layer. The silver / gold heterogeneous quantum dot thin layer is subjected to annealing to form silver / gold heterogeneous quantum dots. The silver / gold heterogeneous quantum dots achieve information storage by capturing tunneling charges. The silver / gold heterogeneous quantum dot thin layer is provided with a barrier layer for blocking captured charges by the silver / gold heterogeneous quantum dots for entering a first electrode. The barrier layer is provided with the first electrode for supplying power to the barrier layer. The semiconductor substrate is provided with a second electrode for supplying power to the semiconductor substrate. The floating gate memory based on the metal heterogeneous quantum dots is advantaged in that the charge storage density is high, the data holding property is good, the operation voltage is low, the erasing and writing speed is fast and the like.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a floating gate memory based on metal heteroquantum dots and a preparation method thereof. Background technique [0002] With the rapid development of the consumer electronics market in recent years, the memory market, which is an important part of the semiconductor and information industries, is getting bigger and bigger. Currently, the mainstream memories on the market are dynamic random access memory (DRAM) and flash memory (FLASH). Although the DRAM has the advantages of high capacity and low cost, the data of the DRAM cannot be saved after the power supply is turned off, which limits the application range of the DRAM. In addition, it will become more and more difficult to shrink the feature size of DRAM closer to the 45nm node, because devices of this size require ultra-high dielectric constant materials (k >700) to maintain high enough capacitance. Although FLASH is a n...

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Problems solved by technology

[0004] However, due to the very thin tunneling barrier, the current charge storage time characteristics of metal quantum dot floating gate memory are far from meeting the requirements of industrial applications, and the gap between storage time and programming time caused by the single barrier structure of the device must be solved. contradiction

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