Organic electroluminescent device and preparation method thereof
An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of easy cracks, reduced lifespan of organic electroluminescent devices, thick and heavy organic electroluminescent devices, etc. problem, to achieve the effect of high density
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Embodiment 1
[0054] figure 1 It is the schematic diagram of the organic electroluminescence device in embodiment 1; As figure 1 As shown, the organic electroluminescent device includes an ITO glass substrate (10), an organic light-emitting functional layer (20), a cathode (30) and an encapsulation layer (40) stacked sequentially from bottom to top; wherein the organic electroluminescent function The layer (20) includes a hole injection layer (21), a hole transport layer (22), a light emitting layer (23), an electron transport layer (24) and an electron injection layer (25) stacked in sequence from bottom to top. figure 2 yes figure 1 Schematic diagram of the structure of the encapsulation layer; such as figure 2 As shown, the encapsulation layer (40) includes a first inorganic barrier layer (41) and a second inorganic barrier layer (42) sequentially stacked on the surface of the cathode (30); more specifically, the first inorganic barrier layer (42) is deposited on the surface of the c...
Embodiment 2
[0073] A method for preparing an organic electroluminescent device, comprising the steps of:
[0074] (1), (2), (3) are the same as embodiment 1;
[0075] (4) Preparation of encapsulation layer:
[0076] a) Preparation of the first inorganic barrier layer: the first inorganic barrier layer was prepared on the surface of the cathode by atomic layer deposition (ALD), the working pressure was 10 Pa, and the deposition temperature was 40 °C; the material was iodine-doped zirconia (ZrO 2 : I), the mass fraction of iodine doping is 8%, and the precursor adopted in the process of depositing the first inorganic barrier layer is tetrakis (diiodomethylamino) zirconium [Zr(N(CH 2 I) 2 ) 4 ] and water vapor, tetrakis(diiodomethylamino)zirconium[Zr(N(CH 2 I) 2 ) 4 ] injection time is 1s, water vapor injection time is 40ms, and nitrogen gas (N 2 ), four (diiodomethylamino) zirconium [Zr (N (CH 2 I) 2 ) 4 ], water vapor and nitrogen (N 2 ) flow rate is 20sccm, the thickness of the...
Embodiment 3
[0081] A method for preparing an organic electroluminescent device, comprising the steps of:
[0082] (1), (2), (3) are the same as embodiment 1;
[0083] (4) Preparation of encapsulation layer:
[0084] a) Preparation of the first inorganic barrier layer: the first inorganic barrier layer was prepared on the surface of the cathode by atomic layer deposition (ALD), the working pressure was 50Pa, and the deposition temperature was 60°C; the material was iodine-doped hafnium oxide (HfO 2 : I), the mass fraction of iodine doping is 25%, and the precursor used in the process of depositing the first inorganic barrier layer is tetrakis(diiodomethylamino) hafnium [Hf(N(CH 2 I) 2 ) 4 ] and water vapor, tetrakis(diiodomethylamino) hafnium [Hf(N(CH 2 I) 2 ) 4 ] injection time is 0.2s, water vapor injection time is 20ms, and nitrogen gas (N 2 ), tetrakis(diiodomethylamino) hafnium [Hf(N(CH 2 I) 2 ) 4 ], water vapor and nitrogen (N 2 ) flow rate is 10sccm, the thickness of the ...
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