YSZ base mixed-potential type NO2 sensor based on hierarchical In2O3 sensing electrode and preparation method
A hybrid potential type, sensitive electrode technology, used in instruments, scientific instruments, analytical materials, etc., can solve the problems of low sensor response value, low sensitivity, and inability to achieve practicality, achieve high sensitivity, simple preparation method, reduce The effect of consumption
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Embodiment 1
[0038] Preparation of In by hydrothermal method 2 o 3 material, will In 2 o 3 Fabrication of YSZ-based mixed potential NO as a sensitive electrode material 2 sensor, and test the gas sensitivity performance of the sensor, the specific process is as follows:
[0039] 1. Make a Pt reference electrode: use Pt slurry to make a Pt reference electrode with a size of 0.5mm×2mm and a thickness of 15μm on one end of the upper surface of the YSZ substrate with a length and width of 2×2mm and a thickness of 0.2mm, and fold it in half with a Pt wire Finally, stick the Pt paste on the middle position of the reference electrode to lead out the electrode lead; then bake the YSZ substrate at 100°C for 1.5 hours, and then sinter the YSZ substrate at 1000°C for 1.5 hours to eliminate the terpineol in the platinum paste , and finally down to room temperature.
[0040] 2. Make In 2 o 3 Sensitive electrode: first prepare In by hydrothermal method 2 o 3 Material. 1mmol of In(NO 3 ) 3 4....
Embodiment 2
[0046] In sintered at 1200°C 2 o 3 material as a sensitive electrode material, making NO 2 The sensor, its manufacturing process is:
[0047] The In prepared by the aforementioned method 2 o 3 Sintered at 1200°C in a muffle furnace to obtain the sensitive electrode material In 2 o 3 (1200° C.), the manufacturing process of the device is the same as that of Embodiment 1, and it is marked as sensor S1200.
Embodiment 3
[0049] In sintered at 1000°C 2 o 3 material as a sensitive electrode material, making NO 2 The sensor, its manufacturing process is:
[0050] The In prepared by the aforementioned method 2 o 3 Sintered at 1000°C in a muffle furnace to obtain the sensitive electrode material In 2 o 3 (1000° C.), the manufacturing process of the device is the same as that of Embodiment 1, and it is marked as sensor S1000.
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