Surface treatment method of a semiconductor lead frame

A lead frame and surface treatment technology, which is applied in the field of surface treatment of semiconductor lead frames, can solve problems such as poor welding quality and insufficient welding of diaphragm layers, achieve good solderability, excellent solderability, and prevent the formation of diaphragm layers Effect

Active Publication Date: 2018-02-13
SICHUAN JINWAN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the defects of loose welding and poor welding quality caused by the formed diaphragm layer during welding of the existing lead frame, the invention provides a surface treatment process of the lead frame, which is provided with a layer of organic protection on the copper surface layer. layer to replace the diaphragm layer, and when dipping tin and welding aluminum wire, this protective layer is naturally eliminated to achieve protection without affecting the welding effect

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The present embodiment comprises the following process steps:

[0037] A. Ultrasonic degreasing: guide the power semiconductor lead frame into the ultrasonic degreasing agent for ultrasonic degreasing, and use sound wave vibration to loosen and fall off the oil stains on the surface, so as to remove the residual grease on the surface of the substrate during stamping. The temperature of the ultrasonic degreasing agent is 50°C (Celsius), the solubility of the ultrasonic degreasing agent is 50g / L (grams per liter), and the ultrasonic degreasing time is 10S (seconds).

[0038] B. Perform electrolytic degreasing: introduce the power semiconductor lead frame into the electrolytic degreasing agent for electrolytic degreasing, and use the hydrogen gas on the surface during electrolysis to remove the oil stains on the surface, so as to remove the residual grease on the surface of the substrate during stamping. The temperature is 55°C, the concentration of the electrolytic degrea...

Embodiment 2

[0046] A. Ultrasonic degreasing: guide the power semiconductor lead frame into the ultrasonic degreasing agent for ultrasonic degreasing, and use sound wave vibration to loosen and fall off the oil stains on the surface, so as to remove the residual grease on the surface of the substrate during stamping. The temperature of the ultrasonic degreasing agent is 55°C (Celsius), the solubility of the ultrasonic degreasing agent is 55g / L (grams per liter), and the ultrasonic degreasing time is 15S (seconds).

[0047] B. Perform electrolytic degreasing: introduce the power semiconductor lead frame into the electrolytic degreasing agent for electrolytic degreasing, and use the hydrogen gas on the surface during electrolysis to remove the oil stains on the surface, so as to remove the residual grease on the surface of the substrate during stamping. The temperature is 50°C, the concentration of the electrolytic degreaser is 55g / L, and the time is 16S.

[0048] C. Sulfuric acid neutraliza...

Embodiment 3

[0055] A. Ultrasonic degreasing: guide the power semiconductor lead frame into the ultrasonic degreasing agent for ultrasonic degreasing, and use sound wave vibration to loosen and fall off the oil stains on the surface, so as to remove the residual grease on the surface of the substrate during stamping. The temperature of the ultrasonic degreasing agent is 60°C (Celsius), the solubility of the ultrasonic degreasing agent is 60g / L (grams per liter), and the ultrasonic degreasing time is 20S (seconds).

[0056] B. Perform electrolytic degreasing: introduce the power semiconductor lead frame into the electrolytic degreasing agent for electrolytic degreasing, and use the hydrogen gas on the surface during electrolysis to remove the oil stains on the surface, so as to remove the residual grease on the surface of the substrate during stamping. The temperature is 55°C, the concentration of the electrolytic degreaser is 58g / L, and the time is 16S.

[0057] C. Sulfuric acid neutraliza...

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PUM

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Abstract

The invention discloses a surface treatment method for a semiconductor lead frame, which sequentially includes ultrasonic degreasing, electrolytic degreasing, water washing, sulfuric acid neutralization activation, water washing, copper electroplating, water washing, acid neutralization, water washing, copper protection, water washing, heating Washing and drying, the specific process requirements for the copper protection are: the semiconductor lead frame is introduced into the protection solution and soaked to achieve the purpose of attaching the copper protection film, the pH of the protection solution is 5-7, and the temperature is 20-40 °C, the soaking time is 10-20S, and the protective solution includes the following components: alkylbenzimidazole: 9-15g / L; acetic acid 1-3g / L. In the present invention, an organic protective layer is arranged on the copper surface layer to replace the diaphragm layer, and when dipping tin and welding aluminum wires, the protective layer is naturally eliminated to achieve protection without affecting the welding effect.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor lead frame, in particular to a surface treatment method for a semiconductor lead frame. Background technique [0002] A very important material in semiconductor packaging is the lead frame. Lead frame is one of the three basic raw materials for semiconductor packaging (the other two are plastic packaging materials and the chip itself). The internal interconnection in the semiconductor package usually uses gold wire, aluminum wire, and copper wire to realize the connection between the pin and the chip. Gold wire ball thermosonic pressure welding using gold wire is mostly used for internal interconnection of memories, processors, and ASIC chips. Cold ultrasonic pressure welding using aluminum wire is mostly used for the packaging of semiconductor devices such as power and rectifiers. [0003] The lead frame is generally made of copper alloy as the base material. The manufacturing proc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48C25D7/12C25D3/38C25D5/34C25D5/48C23C28/00
CPCC23C28/00C25D3/38C25D5/34C25D5/48C25D7/12H01L21/4821
Inventor 王锋涛李南生黄斌夏超华
Owner SICHUAN JINWAN ELECTRONICS
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