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Preparation technology for Ni submicron arrays

A preparation process, sub-micron technology, applied in the direction of metal material coating process, vacuum evaporation plating, coating, etc., can solve problems such as unsuitable for large-scale application, environmental pollution of raw materials, complex process, etc., to improve electrochemical performance , good repeatability, and the effect of increasing the specific surface area

Active Publication Date: 2015-09-16
SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, some researchers use the electrodeposition method to prepare Ni nano-arrays. The process of this method is relatively complicated and the repeatability is poor. It is difficult to meet the actual production needs by controlling the process conditions. The raw materials used will cause certain pollution to the environment and are not suitable for scale. application

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  • Preparation technology for Ni submicron arrays
  • Preparation technology for Ni submicron arrays

Examples

Experimental program
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Effect test

Embodiment 1

[0026] like figure 1 and figure 2 Shown:

[0027] This embodiment adopts SD-550 ultra-high vacuum multifunctional magnetron sputtering equipment (Chengdu Shengda Xingye Chemical Engineering Co., Ltd.);

[0028] The substrate used is a commercial AAO template (Lesson Nano company);

[0029] The purity of the sputtered metal Ni used is 99.999%;

[0030] The purity of working gas Ar is 99.999%;

[0031] The whole deposition process is carried out at room temperature;

[0032] Under the above conditions, the preparation steps of Ni submicron array are as follows:

[0033] (1) Pretreatment of substrate and Ni target before deposition

[0034] a. Cleaning the substrate: first put the substrate into 99.5% acetone and clean it with an ultrasonic cleaner for 15 minutes, then put it in 99.7% absolute ethanol and clean it with an ultrasonic cleaner for 10 minutes, after drying, put it into an ultra-high Vacuum multifunctional magnetron sputtering equipment vacuum chamber, when th...

Embodiment 2

[0045] This embodiment adopts SD-550 ultra-high vacuum multifunctional magnetron sputtering equipment (Chengdu Shengda Xingye Chemical Engineering Co., Ltd.);

[0046] The substrate used is a commercial AAO template (Lesson Nano company);

[0047] The purity of the sputtering metal Ni used is 99.999%; the purity of the working gas Ar is 99.999%;

[0048] The whole deposition process is carried out at room temperature;

[0049] Under the above conditions, the preparation steps of Ni submicron array are as follows:

[0050] (1) Pretreatment of substrate and Ni target before deposition

[0051] a. Clean the substrate: first put the substrate in 99.5% acetone and clean it with an ultrasonic cleaner for 10 minutes, then put it in 99.7% absolute ethanol and clean it with an ultrasonic cleaner for 15 minutes, and put it in an ultrahigh Vacuum multifunctional magnetron sputtering equipment vacuum chamber, when the vacuum degree reaches 4.0×10 -4 Pa, and then perform backsputter cl...

Embodiment 3

[0061] This embodiment adopts SD-550 ultra-high vacuum multifunctional magnetron sputtering equipment (Chengdu Shengda Xingye Chemical Engineering Co., Ltd.);

[0062] The substrate used is a commercial AAO template (Lesson Nano company);

[0063] The purity of the sputtering metal Ni used is 99.999%; the purity of the working gas Ar is 99.999%;

[0064] The whole deposition process is carried out at room temperature;

[0065] Under the above conditions, the preparation steps of Ni submicron array are as follows:

[0066] (1) Pretreatment of substrate and Ni target before deposition

[0067] a. Cleaning the substrate: first put the substrate into 99.5% acetone and clean it with an ultrasonic cleaner for 12 minutes, then put it into 99.7% absolute ethanol and clean it with an ultrasonic cleaner for 12 minutes, after drying, place it in an ultra-high Vacuum multifunctional magnetron sputtering equipment vacuum chamber, when the vacuum degree reaches 4.0×10 -4 Pa, and then pe...

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Abstract

The invention provides a preparation technology for Ni submicron arrays. The preparation technology comprises the steps: firstly, carrying out cleaning pretreatment on a substrate and an Ni target material; then depositing an Ni layer on the substrate; next, carrying out heat treatment on a template after deposition; finally dissolving the template with an alkali solution, after the template is removed, washing with deionized water, and thus obtaining the Ni submicron arrays. Compared with the prior art, the technology has the beneficial effects that the technology adopts a magnetron sputtering method, and is simple and feasible to implement, good in reproducibility, low in required cost, clean and environmentally friendly, and suitable for large-scale application; the prepared Ni submicron arrays are highly ordered and is uniform in diameter, and the Ni submicron arrays with different lengths and diameters prepared by adopting different sizes of AAO templates meet actual needs; and the prepared Ni submicron arrays are stable in structure, can significantly improve the specific surface area of an electrode active substance, and effectively improve the electrochemical performance of a lithium ion battery.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a process for preparing a Ni submicron three-dimensional array for a three-dimensional thin-film lithium-ion battery. Background technique [0002] Energy shortage and environmental pollution are two major problems facing the world at present. Lithium-ion batteries, as a clean energy source, are of great significance to solve these two problems. Lithium-ion batteries have the advantages of high specific capacity, long cycle life, excellent rate performance, environmental friendliness, safety and stability, etc., and are widely used in portable electronic devices, automobiles, aerospace and other fields. [0003] With the continuous development of microelectronics technology, electronic devices are gradually developing in the direction of integration and functional diversification. The micro power supply that provides energy is required to have shape and size designability, high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14C23C14/58
Inventor 刘春海陈昶张伟崔学军陈建金永中王龙
Owner SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
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