Preparation method of diamond heat sink piece

A diamond and heat sink technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of low thermal conductivity, slow diamond growth rate, rough surface, etc., achieve uniform growth, improve The effect of heat dissipation and increasing growth rate

Inactive Publication Date: 2015-09-30
HARBIN INST OF TECH
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to solve the problems of slow growth rate, rough surface and low thermal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of diamond heat sink piece
  • Preparation method of diamond heat sink piece
  • Preparation method of diamond heat sink piece

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0024] Specific implementation mode 1: The preparation method of the diamond heat sink of this embodiment is implemented in the following steps:

[0025] 1. Perform wire cutting on the silicon wafer, and then place it in absolute ethanol and deionized water for ultrasonic cleaning to obtain a clean silicon wafer substrate;

[0026] 2. Uniformly coat nano-diamond suspension on the surface of a clean silicon wafer substrate to obtain a silicon wafer coated with diamond suspension;

[0027] 3. Place the silicon wafer coated with diamond suspension obtained in step 2 in a MWCVD (plasma assisted chemical vapor deposition) device, and pump the vacuum of the vacuum chamber to 3×10 -6 Below Pa, pass in hydrogen and methane, control the hydrogen flow rate from 150 to 500 sccm, and the methane flow rate from 3 to 30 sccm. The silicon wafer coated with diamond suspension is heated to 700 to 1100°C and then chemical vapor deposition is performed, and the silicon substrate is taken out. Diamond h...

specific Embodiment approach 2

[0034] Specific embodiment two: this embodiment is different from specific embodiment one in that in step one, ultrasonic cleaning is performed for 15-30 minutes under the condition of an ultrasonic power of 300-600W. Other steps and parameters are the same as in the first embodiment.

specific Embodiment approach 3

[0035] Embodiment 3: This embodiment is different from Embodiment 1 or 2 in that the particle size of nanodiamonds in the nanodiamond suspension described in step 2 is 5-50 nanometers. Other steps and parameters are the same as those in the first or second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Granularityaaaaaaaaaa
Granularityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a diamond heat sink piece, and relates to a preparation method of diamond. The method is used for the field of heat sink. The method solves the problems that according to an existing MWCVD method, the growth rate of diamond production is slow, the surface is rough, and the heat conductivity is low. The preparation method comprises the steps that firstly, a silicon wafer is cut, and after the silicon wafer is ultrasonically cleaned, a clean silicon wafer substrate is obtained; secondly, the surface of the clean silicon wafer substrate is evenly coated with nano diamond suspension liquid; thirdly, the silicon wafer coated with the diamond suspension liquid is placed in an MWCVD device, and after hydrogen and methane are led in the device, chemical vapor deposition is carried out; and fourthly, a mixed solution of HNO3 and HF is utilized for carrying out corrosion to remove the silicon substrate, and after cleaning, the diamond heat sink piece is obtained. The method that the surface is coated with the nano diamond suspension liquid is used for obviously improving the growth rate of a diamond film, the growth rate reaches 2 micrometers per hour to 5 micrometers per hour, the roughness of a growth surface can be reduced to 600nm, the heat conductivity is high, and the method conforms to the standard of artificial diamond heat sink.

Description

Technical field [0001] The invention relates to a method for preparing diamond and uses it in the field of heat sinks. Background technique [0002] Under the trend of increasing operating frequency and integration of civil electronic devices, the heat generated by the normal operation of the device is increasingly threatening the stability of the device itself. This situation becomes even more important when the device gradually enters the nanometer size. Seriously, how to increase the increasing heat of electronic devices has become an urgent technical problem in the industry. Heat sink is an important component to solve this problem. The choice of heat sink material is directly related to the performance of the component, so It has become an indispensable part of the electronic device preparation and performance optimization process. [0003] At present, HPHT method and low pressure vapor deposition method are the main methods for synthetic diamond synthesis. The HPHT method pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/27C23C16/02
Inventor 朱嘉琦代兵赵继文韩杰才杨磊王强刘康陈亚男孙明琪
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap