Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composition for encapsulating organic light-emitting diodes and displays manufactured using the same

A technology for light-emitting diodes and components, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of light-emitting characteristics and reliability degradation of organic light-emitting diodes

Active Publication Date: 2018-07-13
SAMSUNG SDI CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the light emission characteristics and reliability of the organic light emitting diode suffer from deterioration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composition for encapsulating organic light-emitting diodes and displays manufactured using the same
  • Composition for encapsulating organic light-emitting diodes and displays manufactured using the same
  • Composition for encapsulating organic light-emitting diodes and displays manufactured using the same

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0141] Preparation example 1: Preparation of silicon-containing monomer

[0142] In a 1000ml flask with a cooling tube and a stirrer, put 300ml ethyl acetate, 25g 3-phenyl-1,1,3,5,5-pentamethyltrisiloxane (Gelest Corporation (Gelest) , Inc.)) and 43 g of allyl alcohol (Daejung Chemicals & Metals Co. Ltd.), followed by nitrogen purging for 30 minutes. After that, 72 ppm platinum / carbon black powder (Aldrich Chemical) was put into the flask, and the temperature of the flask was increased to 80° C., followed by stirring for 4 hours. Residual solvent was removed by distillation. After introducing 71.5 g of the obtained compound into 300 ml of methylene chloride, 39 g of triethylamine was added thereto, followed by slowly introducing 34.3 g of acryloyl chloride while stirring the components at 0°C. The residual solvent was removed by distillation, whereby the compound represented by Formula 3 was prepared. The obtained compound (molecular weight: 522.85 g / mol) had a purity of 97...

preparation example 2

[0146] Preparation example 2: Preparation of silicon-containing monomer

[0147] Except using 21g 3,3-diphenyl-1,1,5,5-tetramethyltrisiloxane instead of 25g 3-phenyl-1,1,3,5,5-pentamethyltrisiloxane alkane, and using 30.2 g of methacryloyl chloride instead of 34.3 g of acryloyl chloride, the compound represented by Formula 4 was prepared in the same manner as in Preparation Example 1. The obtained compound (molecular weight: 584.92 g / mol) had a purity of 96%, as determined by HLPC.

[0148] (1H NMR: δ7.52, m, 6H: δ7.42, m, 4H: δ6.25, d, 2H: δ6.02, dd, 2H: δ5.82, t, 1H: δ5.59, d, 2H: δ3.86, m, 4H: δ1.52, m, 4H: δ0.58, m, 4H: δ0.04, m, 12H)

[0149]

[0150]

preparation example 3

[0151] Preparation example 3: Preparation of silicon-containing monomer

[0152]Except using 21g 1,3,5-triphenyl-1,3,5-trimethyltrisiloxane instead of 25g 3-phenyl-1,1,3,5,5-pentamethyltrisiloxane alkane, and using 31 g of methacryloyl chloride instead of 34.3 g of acryloyl chloride, the compound represented by Formula 5 was prepared in the same manner as in Preparation Example 1. The obtained compound (molecular weight: 646.99 g / mol) had a purity of 94% as determined by HLPC.

[0153] (1H NMR: δ7.51, m, 3H: δ7.29, m, 12H: δ6.25, d, 2H: δ6.02, dd, 2H: δ5.82, t, 1H: δ5.59, d, 2H: δ3.86, m, 4H: δ1.52, m, 4H: δ0.58, m, 4H: δ0.16, m, 9H)

[0154]

[0155]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a composition for encapsulating an organic light emitting diode, which comprises a photocurable monomer, a silicon-containing monomer and an initiator, wherein the silicon-containing monomer is represented by formula 1. Moreover, the present invention discloses an organic light emitting diode display. The composition can reduce water vapor permeability and reduce plasma-induced outgassing that may follow fabrication of thin-film encapsulation layers, while achieving an organic barrier layer with a low plasma etch rate.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2014-0037105 filed with the Korean Intellectual Property Office on March 28, 2014, the entire disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to a composition for encapsulating an organic light emitting diode and an organic light emitting diode (OLED) display manufactured using the composition. Background technique [0004] OLED displays are emissive displays and contain organic light emitting diodes. Since the light emitting characteristics of the organic light emitting diode suffer from deterioration after being in contact with external moisture or oxygen, it is necessary to encapsulate the organic light emitting diode with a composition for encapsulation. Organic light emitting diodes are packaged in a multilayer structure in which an inorganic barrier layer and an organic barrier ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/54H01L27/32H10K99/00
CPCC08F290/068C09D183/10C08G77/20C08G77/442C08G77/80H10K59/8731C08F222/10C08L43/04H10K85/40H10K50/8445H10K85/151C08L33/14
Inventor 南成龙禹昌秀李昌珉高盛慜柳汉成李知娟河京珍
Owner SAMSUNG SDI CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products