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High-quality graphene and preparation method thereof

A graphene, high-quality technology, applied in the field of graphene, can solve the problems of inability to obtain high-conductivity graphene films, unfavorable energy-saving and consumption-reducing flexible conductive films, and high cost of hydrazine hydrate, achieving less impurities, good dispersibility, The effect of excellent electrical and thermal conductivity

Active Publication Date: 2015-10-14
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thermal reduction should be carried out in an inert or reducing atmosphere, and the reduction temperature is as high as 1000°C, which is not conducive to energy saving and consumption reduction and the preparation of flexible conductive films; the cost of hydrazine hydrate is high, pollutes the environment, and the film is easily broken, so it is impossible to obtain highly conductive graphene film

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  • High-quality graphene and preparation method thereof

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preparation example Construction

[0032] The method for preparing high-quality graphene of the present invention uses graphene oxide as an auxiliary substance to wrap and embed expanded graphite sheets, and utilizes the reaction force of graphite oxide during high-temperature expansion and reduction to assist in stripping the expanded graphite to prepare graphene. At the same time, high-quality graphene can also be prepared in combination with ultrasonic exfoliation in a solvent.

[0033] figure 1 A flowchart showing graphene oxide-assisted exfoliation of expanded graphite to prepare high-quality graphene according to one embodiment of the preparation method of the present invention. The following combination figure 1 This embodiment will be specifically described.

[0034] In this embodiment, graphene oxide as a raw material can be prepared by the Hummers method. However, it should be understood that in the present invention, the source of graphene oxide is not limited, for example, it can also be purchase...

Embodiment 1

[0051] refer to figure 1 , figure 1 The process flow diagram showing the preparation method for preparing graphene according to the embodiment of the present invention includes the following steps.

[0052] The first step is to prepare graphite oxide: the average particle size of graphite powder in this example is 325 mesh. Graphene oxide (GO) was synthesized by the Hummers method. 2g graphite powder, 1g NaNO 3 Mix well with 230ml concentrated sulfuric acid in an ice-water bath, slowly add 6g KMnO 4 . Then the temperature was raised to 35°C, and after stirring for 30 minutes, 92 mL of deionized water was added, and the temperature was raised to 98°C for 15 minutes to react. After that, add 280mL water to it to dilute, and wash with 5mL30%H 2 o 2 Neutralize excess KMnO 4 . The color of the mixed solution was brownish yellow, and it was filtered while hot, washed repeatedly with deionized water until neutral, and GO was obtained by ultrasonication.

[0053] The second ...

Embodiment 2

[0059] The preparation process steps of graphene are as follows.

[0060] The first step is to prepare graphite oxide: the average particle size of graphite powder in this example is 800 mesh. GO was synthesized by the Hummers method. As in Example 1.

[0061] The second step is the embedded wrapping of graphite oxide to expanded graphite: add 1g of expanded graphite to 150ml of graphene oxide solution with a mass fraction of 8mg / ml, stir for 5h to fully combine expanded graphite with graphene oxide, and make graphene oxide embedded in the voids of expanded graphite. The mixture was then dried at 80°C to a block.

[0062] The third step, graphene oxide-assisted exfoliation of expanded graphite to prepare graphene: the above-mentioned dried product was treated at a high temperature of 800° C. for 10 minutes to obtain a fluffy graphene powder. Its SEM photo see Figure 4 .

[0063] The fourth step, ultrasonic treatment: disperse 1 g of the obtained graphene powder in 200 m...

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Abstract

The invention relates to high-quality graphene and a preparation method thereof. The preparation method includes the steps of (1) wrap-embedding graphene oxide into the lamellas in expanded graphite to obtain a graphene oxide / expanded graphite mixture; and (2) performing thermal-treatment to the graphene oxide / expanded graphite mixture so that the expanded graphite can be stripped with assistance of a reaction force from high-temperature expansion reduction of the graphene oxide, thereby preparing the graphene powder. In the invention, the graphene oxide is wrap-embedded into the lamellas in the expanded graphite, and the expanded graphite is stripped-away with the impact force of a violent reaction in the high-temperature expansion reduction of the graphene oxide, thereby obtaining loosen graphene powder. The expanded graphene is controllable in the number of layers, is free of defect, is less in impurities and is high in purity.

Description

technical field [0001] The invention relates to the field of graphene, in particular to high-quality graphene prepared by graphene oxide-assisted exfoliation of expanded graphite, a preparation method thereof, and an application in conductive and heat-conducting films. Background technique [0002] Since its discovery in 2004, graphene has immediately aroused great interest in the scientific research community, and has become a hot material in scientific research in recent years. Graphene is a two-dimensional honeycomb structure formed by a single layer of carbon atoms closely arranged. Its special physical and chemical properties: high specific surface area, excellent electrical and thermal conductivity, and good mechanical strength make it widely used in nanoelectronics, supercapacitors, The fields of batteries and sensors have broad application prospects. [0003] The preparation of graphene has always been a hot topic of concern, which is directly related to the subsequ...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 黄富强张阳毕辉于刘涛
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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