System and method for measuring electromagnetic damage threshold of semiconductor device

Abstract

A semiconductor-device electromagnetic damage threshold measurement system and a method are disclosed. The system comprises two radio frequency sources with adjustable frequencies and adjustable power, a combiner, a power amplifier, an isolator, a directional coupler, a semiconductor device test clamp, an oscilloscope and an external power supply source. The method comprises the following steps of measuring a device characteristic of each sample; putting a tested semiconductor device into the semiconductor device test clamp and providing power for the tested semiconductor device; connecting a radio frequency signal generator and closing output of the radio frequency signal generator; opening the power amplifier and adjusting a gain; opening output of the signal generator, observing incident power and reflection power of a dual-channel power meter and recording data on the oscilloscope; removing the tested device, detecting whether performance is changed and recording related data on the oscilloscope if the performance is changed. By using the system and the method of the invention, electromagnetic damage energy of the semiconductor device can be tested; an electromagnetic damage threshold can be determined and a technology support is provided for a safety assessment of the semiconductor device in a complex electromagnetic environment.

Description

technical field [0001] The invention relates to the technical field of electronic device testing, in particular to a system and method for measuring the electromagnetic damage threshold of a semiconductor device. Background technique [0002] A large number of applications of various high-power radio transmission equipment make the electromagnetic environment increasingly complex. Now developed high-power microwave weapons, electromagnetic bombs, electromagnetic missiles and nuclear electromagnetic pulse weapons make the electromagnetic environment in space even worse. With the continuous development of military electronic technology and information equipment, the electronic technology content in equipment is gradually increasing. In many electronic devices and circuits, the operating frequency is continuously increasing, while the operating voltage is gradually decreasing, so the sensitivity and vulnerability to electromagnetic pulses are also increasing. At the same time...

AI Technical Summary

Problems solved by technology

[0004] Electrostatic discharge electromagnetic pulse injection or square wave signal injection is usually carried out in domestic semiconductor device electromagnetic damage experiments. This electromagnetic damage experiment can only simulate the electromagnetic damage caused by a single electrostatic discharge electromagnetic pulse or square wave pulse to semiconductor devices. The electromagnetic pulses that cause damage to semiconductor devices are complex and diverse, and the existing experimental methods cannot simulate the actual complex electromagnetic signals

At the same time, most of the current semiconductor device damage experiments are in the static (non-working state) of the device, and no dynamic (working state) electromagnetic damage experiments are carried out.

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