Signal amplifier, reading circuit of magnetic memory and operation method of magnetic memory

Abstract

The invention provides a signal amplifier, a reading circuit of a magnetic memory and an operation method of the magnetic memory. A magnetic memory module comprises a plurality of magnetic storage units, a plurality of bit lines, a plurality of word lines, a plurality of reference storage units, at least one reference line and at least one high-speed reading and sensing amplifier. When reading operation is carried out, only one storage unit which is selected by the word lines and the bit lines at the same time provides a data signal; only one reference storage unit which is selected by the same word line provides a reference signal; the signal amplifier comprises logic, amplification and latch circuits; the data signal and the reference signal are inputs of the signal amplifier; the amplifier is a primary amplification and latches a multi-functional circuit; after the signal amplification is finished, output data is automatically latched, so that the amplification signal is reduced and the reading time is shortened; and meanwhile, an amplification finishing output signal is generated to close the corresponding storage module to save the power consumption.

Description

technical field [0001] The invention belongs to the technical field of semiconductor and integrated circuit chip design, and more specifically relates to a signal amplifier, a read circuit of a magnetic memory and an operation method thereof. Background technique [0002] Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an interdisciplinary comprehensive project for the development of complex systems with a large span of disciplines and high engineering complexity. It summarizes physics, materials science, electronic engineering and semiconductor science, And magnetism and other disciplines. [0003] MRAM is a very small-sized magnetic element made of special magnetic material, and the magnetic element is integrated into a semiconductor process to make a magnetic random access memory chip, such as figure 1 (a) and figure 1 As shown in (b), the first-generation Magnetic Random Access Memory (MRAM) is composed of multiple magnetic elements, and there ...

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Problems solved by technology

[0003] MRAM is a very small-sized magnetic element made of special magnetic material, and the magnetic element is integrated into a semiconductor process to make a magnetic random access memory chip, such as figure 1 (a) and figure 1 As shown in (b), the first-generation Magnetic Random Access Memory (MRAM) is composed of multiple magnetic elements, and there are two wires near each magnetic element. During the write operation, the current passes through the wires to generate two A magnetic field, the magnet body changes the magnetic pole direction of the magnet under the action of the magnetic field, and the large current passing through the wire can have two opposite directions, so that the magnet presents two different magnetic pole directions, thereby achieving two different reluctance. Value state: the state of low reluctance is "0", and the state of high reluctance is "1". Since the magnetic field will affect the adjacent magnetic elements, the state of these magnetic elements is unstable. With the improvement of semiconductor technology, every The size of each memory cell is getting smaller and smaller, and the memory cells based on these magnetic elements are more unstable

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