Linear polarization light-emitting laser diode having resonant cavity
A laser diode and linear polarization technology, applied to the field of linearly polarized light-emitting laser diodes, can solve the problems of reducing laser usage efficiency, affecting the luminous efficiency and polarization characteristics of polarized light-emitting devices, and weak penetrating ability, achieving excellent optical polarization characteristics and improving light output. Efficiency and wavelength uniformity, the effect of improving the extinction ratio
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Embodiment 1
[0026] refer to figure 1 A GaN-based LED chip with a horizontal structure consists of a sapphire substrate 1, u-GaN buffer layer 2, n-GaN3, n-electrode 8, quantum well 4, p-GaN5, ITO layer 6 and p-electrode 7, during the manufacturing process , by nanoimprinting or laser interference method to make strip grating 9 patterns, and then use photon beam evaporation to deposit metal Ag to remove the mask to form strip grating 9; sputter ITO layer 6 on p-GaN5 as current spreading layer, and then use the method of sputtering to make the reflector 10 on the ITO layer 6, and then use dry etching to expose the n-GaN3, and finally make the upper electrode.
Embodiment 2
[0028] refer to figure 2 , a GaN-based LED chip with a flip-chip structure includes a metal substrate 12 bonding layer, a metal adhesion layer 11, a p-electrode 7, an ITO layer 6, p-GaN5, a quantum well 4, n-GaN3, an n-electrode 8, u -GaN buffer layer 2 and sapphire substrate 1, the difference between the manufacturing process and the first embodiment is that: the mirror 10 is made on the sapphire substrate 1, and the strip grating is made on the ITO layer 6.
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