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Transparent conducting thin film and manufacturing method thereof

A technology of transparent conductive film and conductive film, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the change and improvement of conductivity and light transmittance limited, cannot be flexibly adjusted, ITO price Overexpensive and other issues, to achieve excellent quality, reduce complexity and environmental requirements, and improve optical performance

Active Publication Date: 2015-11-11
SHAANXI NORMAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current mainstream transparent conductive film is mainly ITO, but the price of ITO is relatively expensive, and the change and improvement of the conductivity and light transmittance of the existing single-layer transparent conductive film are very limited, and it cannot be flexibly adjusted. How to prepare the price Inexpensive, transparent conductive film with good conductivity and excellent visible light transmittance has become the key

Method used

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  • Transparent conducting thin film and manufacturing method thereof
  • Transparent conducting thin film and manufacturing method thereof
  • Transparent conducting thin film and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Step 1, using H 2 -Ar mixed gas plasma method to treat the substrate surface and activate the surface;

[0045] Step 2, depositing a layer of prefabricated titanium nano-metal layer on the flexible substrate PET, the conditions are as follows:

[0046]

[0047] Step 3, use sputtering equipment to sputter doped zinc oxide film on the prefabricated layer, and the sputtering conditions are as follows:

[0048]

[0049] The average light transmittance in the visible light region is >70%, and the resistivity is -3 ohm cm

[0050]Step 4, sputtering a silver film on the existing doped zinc oxide film with a sputtering device, the sputtering conditions are as follows:

[0051]

[0052]

[0053] Step 5, using sputtering equipment to sputter doped zinc oxide film on the existing silver film, the sputtering conditions are as follows:

[0054]

[0055] The average light transmittance in the visible light region is >70%, and the resistivity is -3 ohm cm;

[0056] ...

Embodiment 2

[0058] Step 1, use a sputtering device to sputter a doped zinc oxide film on the PET that has undergone plasma surface treatment, and the sputtering conditions are as follows:

[0059]

[0060] The average light transmittance in the visible light region is >70%, and the resistivity is -3 ohm cm;

[0061] Step 2, sputtering a silver film on the existing doped zinc oxide film with a sputtering device, the sputtering conditions are as follows:

[0062]

[0063] Step 3, use sputtering equipment to sputter doped indium oxide film on the existing silver film, the sputtering conditions are as follows:

[0064]

[0065] The average light transmittance in the visible light region is >70%, and the resistivity is -3 ohm cm;

[0066] Result: light transmittance 84%, resistivity 2×10 -4 Ω. cm.

Embodiment 3

[0068] Step 1. Use a sputtering device to sputter a doped zinc oxide film on ultra-clear glass through plasma surface treatment, and the sputtering conditions are as follows:

[0069]

[0070] Step 2. sputter silver film on existing doped zinc oxide film surface with sputtering equipment, sputtering condition is as follows:

[0071]

[0072] Step 3. sputtering doped indium oxide film on the silver film with sputtering equipment, the sputtering conditions are as follows:

[0073]

[0074] The average light transmittance in the visible light region is >70%, and the resistivity is -3 ohm cm;

[0075] Result: light transmittance 85%, resistivity 2×10 -4 Ω. cm.

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Abstract

The invention provides a transparent conducting thin film which comprises a substrate, transparent conducting thin film bodies deposited on the substrate and at least one buffering layer thin film deposited between the transparent conducting thin film bodies. A manufacturing method of the transparent conducting thin film includes the following steps that firstly, the first transparent conducting thin film body is deposited on the pretreated substrate; secondly, one buffering layer thin film with the thickness not larger than 100 nanometers is deposited; thirdly, the corresponding transparent conducting thin film body is deposited on the buffering layer thin film; fourthly, the second step and the third step are repeated till the number of the buffering layer thin films is reached, and therefore the transparent conducting thin film is manufactured. Due to the fact that the transparent conducting thin film bodies are deposited and the buffering layer thin films are added between the transparent conducting thin film bodies to manufacture the transparent conducting thin film, the transparent conducting thin film is manufactured through the low-cost buffering layer thin films. The electrical property and the optical property of the transparent conducting thin film are improved and cost is low.

Description

technical field [0001] The invention relates to a conductive thin film material, in particular to a transparent conductive thin film and a preparation method thereof. Background technique [0002] With the development of science and technology and the continuous improvement of people's living standards, high-resolution, large-size flat-panel displays, solar cells, energy-saving infrared reflective films, electrochromic windows, etc. are widely used, and the demand for transparent conductive films is increasing. Moreover, people's requirements for transparent conductive films are getting higher and higher. Transparent conductive films not only require good electrical conductivity, but also have excellent visible light transmittance. From the perspective of physics, the light transmission and conductivity of matter are a pair of basic contradictions. However, the current mainstream transparent conductive film is mainly ITO, but the price of ITO is relatively expensive, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/14C23C14/08C23C14/34C23C14/24
Inventor 刘生忠常远程朱学杰邓增社肖锋伟田占元訾威魏葳朱小宁范瑞娟赵炎
Owner SHAANXI NORMAL UNIV
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