High-resistance substrate for high-electron-mobility transistor and growing method thereof

A high electron mobility, transistor technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of deteriorating electrical properties of devices, crystal quality degradation, and no withstand voltage, so as to achieve excellent crystal quality and reduce lattice distortion. Effect

Active Publication Date: 2015-11-11
SHANGHAI SIMGUI TECH
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Problems solved by technology

Due to the limitation of its solid solubility in nitride, this method cannot be doped with a high concentration at will, otherwise it will cause the crystal quality of other epi

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  • High-resistance substrate for high-electron-mobility transistor and growing method thereof
  • High-resistance substrate for high-electron-mobility transistor and growing method thereof
  • High-resistance substrate for high-electron-mobility transistor and growing method thereof

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[0021] The specific implementations of the high resistance substrate and the growth method for the high electron mobility transistor provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] Reference attachment figure 1 Shown is a schematic diagram of the structure of a high resistance substrate for a high electron mobility transistor according to this embodiment, which includes a supporting substrate 10 and a high resistance layer 20 on the surface of the supporting substrate 10. The material of the high resistance layer 20 is nitride. The high resistance layer 20 includes a periodic structure in which a plurality of doped layers 21 and a plurality of non-doped layers 22 are alternately arranged. The multiple doped layers 21 and the multiple non-doped layers 22 included in the high resistance layer 20 are all nitride materials, and the material of the doped layer 21 is nitride containing deep-level doping element...

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Abstract

The present invention provides a high-resistance substrate for a high-electron-mobility transistor and a growing method thereof. The high-resistance substrate comprises a supporting substrate and a high resistance layer at the surface of the supporting substrate, wherein the material of the high resistance layer is nitride. The high-resistance substrate is characterized in that the high resistance layer comprises a periodic structure consisting of a plurality of doped layers and a plurality of non-doped layers, the doped layers and the non-doped layers are arranged alternately, the material of the doped layer is nitride containing a deep-energy-level doped material. The high-resistance substrate of the present invention has the advantages of capacity of well ensuring excellent crystal quality of an epitaxial layer while ensuring that a high resistance characteristic is resulted from deep-energy-level doping concentration.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a high-resistance substrate for high electron mobility transistors and a growth method. Background technique [0002] Nitride semiconductors such as gallium nitride (GaN) and its alloy aluminum gallium nitride (AlGaN) are important wide bandgap compound semiconductors. Due to the large forbidden band width, high breakdown electric field, high electron saturation drift velocity and peak drift velocity, more importantly, two-dimensional electrons with high electron concentration and high electron mobility are formed at the AlGaN / GaN heterojunction interface. Gas (2DEG), so nitride semiconductors have very important application prospects in high-temperature, high-frequency, high-power, radiation-resistant microwave devices or high-power electronic devices and their circuits. [0003] In order to realize the pinch-off performance of gallium nitride-based high electron mobility...

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Application Information

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IPC IPC(8): H01L29/20H01L29/201H01L29/207H01L21/02
CPCH01L21/02381H01L21/0254H01L21/0257H01L21/02587H01L21/0262H01L29/2003H01L29/201H01L29/207
Inventor 闫发旺张峰王文宇
Owner SHANGHAI SIMGUI TECH
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