A Wet Chemical Method for Fabricating Uniform Inverted Pyramid Texture on Single Crystal Silicon Surfaces

Abstract

The invention discloses a wet chemical method of preparing uniform reverse pyramid textured structures on the surface of a monocrystalline silicon. The method is use for preparing uniform reverse pyramid textured structures on the surface of a large-size monocrystalline silicon. The method includes the following steps: firstly, placing a monocrystalline silicon chip in a deposition solution for deposition; secondly, placing the silicon chip that has undergone particle deposition processing in an etching solution for etching; thirdly, placing the silicon chip that has undergone etching processing in an alkali solution to conduct anisotropic etching; and fourthly, removing metal on the surface of the silicon chip by means of an acid solution. The method is capable of preparing uniform reverse pyramid textured structures on the surface of a large-size monocrystalline silicon. According to the method, pre-corrosion needs not to be conducted on the surface of a silicon chip, control over the dimensions of hole structures and control over distribution uniformity of the hole structures can be achieved through control during a metal deposition stage, and finally reverse pyramid structures can be evenly distributed over large areas. The method is simple and effective.

Description

technical field [0001] The invention relates to a wet chemical method for preparing uniform inverted pyramid suede on the surface of single crystal silicon. Background technique [0002] For crystalline silicon photovoltaic cells, increasing the light absorption of silicon wafers as much as possible is an important link to improve the conversion efficiency of solar cells. Depositing anti-reflection coatings on the surface of crystalline silicon solar cells and texturing the surface of silicon wafers are commonly used methods to increase the light absorption of cells. For monocrystalline silicon photovoltaic cells, the currently widely used production process is to etch randomly distributed positive pyramid-like textured structures on the surface of silicon wafers by means of alkaline etching. Compared with the positive pyramid texture, there are actually many other silicon wafer surface textures that can increase light absorption, such as circular hole texture, honeycomb te...

AI Technical Summary

Problems solved by technology

However, since the size of porous silicon holes and trenches is generally between 100-300 nanometers, and the depth of the diffusion junction is 200-300 nanometers, a large number of diffusion dead layers are generated on the surface of black silicon, and the strong recombination effect of the dead layers is greatly improved. Limiting the improvement of efficiency, the method of making black silicon from single crystal has not been applied to the battery production line