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Method for preparing efficient flexible copper-indium-gallium-selenide thin-film solar cell at low temperature

A technology of thin-film solar cells and copper indium gallium selenide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems affecting solar cell performance, flexible substrate material damage, substrate substrate failure and denaturation, etc.

Active Publication Date: 2015-12-02
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] It should be noted that in the above-mentioned patents, the substrate temperature required for the preparation of the copper indium gallium selenide thin film absorption layer is around 450°C, and a higher substrate temperature will affect the flexible substrate materials (polyimide, polyimide, Titanium foil, etc.) cause damage and cause the substrate to fail and denature, thereby affecting the performance of the solar cell

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Step 101. Fabrication of Back Electrode on Polyimide Substrate

[0040] Mo with a thickness ranging from 500nm to 700nm was deposited on the polyimide substrate by a DC magnetron sputtering deposition system as the back electrode. Mo was a double-layer structure, and the layer close to the substrate was a high resistance Mo layer with a thickness ranging from 100nm to 100nm. 150nm, deposit a low-resistance Mo layer of 400nm-550nm on the high-resistance Mo layer, as the back electrode of the battery; in this preferred embodiment, the thickness of Mo is 500nm or 700nm, and the thickness of the high-resistance Mo layer is 100nm or 150nm , the thickness of the low-resistance Mo layer is 400nm or 550nm;

[0041] Step 2. Preparation of Antimony Thin Film on the Back Electrode by Electron Beam Evaporation

[0042] An antimony film with a thickness of 12 nm was evaporated on the prepared Mo back electrode for 50 minutes by using electron beam evaporation equipment with an elec...

Embodiment 2

[0048] Step 1. Fabrication of Back Electrode on Titanium Foil Substrate (100 μm)

[0049]Mo with a thickness of 500nm-700nm was deposited on the titanium foil substrate by a DC magnetron sputtering deposition system as the back electrode. Mo was a double-layer structure, and the layer close to the substrate was a high-resistance Mo layer with a thickness of 100nm-150nm. A low-resistance Mo layer of 400nm-550nm is deposited on the resistive Mo layer as the back electrode of the battery; in this preferred embodiment, the thickness of Mo is 500nm or 700nm, the thickness of the high-resistance Mo layer is 100nm or 150nm, and the thickness of the low-resistance Mo layer is 500nm or 700nm. The thickness of the layer is taken as 400nm or 550nm;

[0050] Step 2. Preparation of Antimony Thin Film on the Back Electrode by Electron Beam Evaporation

[0051] An antimony film with a thickness of 12 nm was evaporated on the prepared Mo back electrode for 50 minutes by using electron beam e...

Embodiment 3

[0057] Step 1. Fabrication of Back Electrode on Stainless Steel Substrate (100 μm)

[0058] Mo with a thickness of 500nm-700nm was deposited on a stainless steel substrate by a DC magnetron sputtering deposition system as a back electrode. Mo was a double-layer structure, and the layer close to the substrate was a high-resistance Mo layer with a thickness of 100nm-150nm. A low-resistance Mo layer of 400nm-550nm is deposited on the Mo layer as the back electrode of the battery; in this preferred embodiment, the thickness of Mo is 500nm or 700nm, the thickness of the high-resistance Mo layer is 100nm or 150nm, and the thickness of the low-resistance Mo layer is 500nm or 700nm. The thickness of 400nm or 550nm;

[0059] Step 2. Preparation of Antimony Thin Film on the Back Electrode by Electron Beam Evaporation

[0060] An antimony film with a thickness of 12 nm was evaporated on the prepared Mo back electrode for 50 minutes by using electron beam evaporation equipment with an el...

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Abstract

The invention discloses a method for preparing an efficient flexible copper-indium-gallium-selenide thin-film solar cell at low temperature, comprising the following steps: step 1, using a direct-current magnetron sputtering deposition system to deposit Mo of which the thickness is 500-700nm on a flexible substrate as a back electrode, and depositing a low-resistance Mo layer of which the thickness is 400-550nm on a high-resistance Mo layer as a back electrode of the cell, wherein Mo is of a two-layer structure, and the thickness of the high-resistance Mo layer is 100-150nm; step 2, using a piece of electron beam evaporation equipment to evaporate a 12nm antimony thin film on the Mo back electrode for 50 minutes at the electron beam evaporation power of 0.1kw; step 3, preparing a copper-indium-gallium-selenide absorption layer on the antimony thin film by a co-evaporation method; and step 4, preparing a copper-indium-gallium-selenide thin-film solar cell on the copper-indium-gallium-selenide absorption layer.

Description

technical field [0001] The invention relates to the technical field of preparation of high-efficiency copper-indium-gallium-selenide thin-film solar cells, in particular to a method for preparing high-efficiency flexible copper-indium-gallium-selenide thin-film solar cells at low temperature. Background technique [0002] The biggest problem facing mankind in the 21st century is not only energy problems, but also environmental problems. The use of solar energy to solve global energy and environmental problems has attracted more and more attention, and various solar cells have emerged as the times require. In the crisis of global warming caused by the increasing shortage of energy and the excessive use of fossil fuels, solar photovoltaic power generation has become a clean energy source that countries prioritize for development. Copper indium gallium selenide (CIGS) compound solar cells have become one of the most promising photovoltaic devices due to their high conversion ef...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/032H01L31/18
CPCH01L31/022441H01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 申绪男赵岳王胜利赖运子刘帅奇赵彦民乔在祥
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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