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Direct synthesis of large-area graphene oxide based on plasma chemically enhanced vapor deposition

A plasma and vapor deposition technology, applied in the field of material science, can solve the problems of destroying the integrity of graphene oxide film and long reaction time, and achieve the effects of controllable oxygen content, short reaction time and large size

Inactive Publication Date: 2017-02-01
FUDAN UNIV
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Problems solved by technology

This method overcomes the shortcoming that the graphene oxide prepared in the modified Hummer method is too small, but its disadvantages are also very obvious: the synthesis of graphene oxide needs to be carried out in two steps, and the reaction time is long; When the graphene is processed, once the conditions are not well controlled, the graphene will be partially etched, forming cavities, and destroying the integrity of the graphene oxide film.

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  • Direct synthesis of large-area graphene oxide based on plasma chemically enhanced vapor deposition
  • Direct synthesis of large-area graphene oxide based on plasma chemically enhanced vapor deposition
  • Direct synthesis of large-area graphene oxide based on plasma chemically enhanced vapor deposition

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Embodiment Construction

[0025] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] figure 1 Shown is a schematic of the plasma-enhanced chemical vapor deposition system used to synthesize graphene oxide. In this example, we use 99.998% pure copper foil with a thickness of 25 μm as the substrate.

[0027] First, put the cut copper foil into acetone and ultrasonically clean it for 10 minutes. After taking it out, rinse it with deionized water, and then soak it in dilute hydrochloric acid (5% mass concentration) for 10 minutes to remove the oxide on the surface of the copper foil. Then rinse the copper foil in deionized water, dry it with 99% nitrogen and put it in an incubator at 70°C to further remove the moisture on the surface. The copper foil after the above treatment can be used as the copper foil substrate 107 for graphene oxide synthesis.

[0028] The plasma enhanced chemical vapor deposition system used...

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Abstract

The invention belongs to the technical field of material science, and particularly relates to a method of directly synthesizing large-area graphene oxide based on plasma-enhanced chemical vapor deposition. The method comprises the following specific steps of pretreating a substrate; growing graphene oxide on the substrate by using a plasma-enhanced chemical vapor deposition system; after the growth is ended, taking out the graphene oxide, wherein the key point of synthesis is introduction and control of oxide atoms. The method disclosed by the invention is short in reaction time and low in reaction temperature; in addition, oxygen content of the graphene oxide is controllable. Compared with existing graphene oxide synthesized by a chemical method, the graphene oxide synthesized by the method disclosed by the invention has the characteristics of large size and good uniformity in size, and can be applied to the fields of gas detection, photoelectric devices and the like.

Description

technical field [0001] The invention belongs to the technical field of material science, and in particular relates to a method for directly synthesizing large-area graphene oxide based on plasma chemically enhanced vapor deposition. Background technique [0002] Graphene is a material with excellent electrical, mechanical, and thermal properties, and is considered to be the basic material for the future microelectronics industry. Graphene oxide is a derivative of graphene, which is constructed by grafting oxygen atoms, hydroxyl groups, carboxyl groups, carbonyl groups and other oxygen-containing groups on the graphene lattice carbon. Compared with graphene, graphene oxide has better adsorption of molecules due to its polar oxygen-containing groups, so it can be used as a gas or liquid sensor. In addition, due to the role of polar groups, the micro-sized graphene oxide will spontaneously form an ordered layered structure in the solution, which can be used for solution filtra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04
Inventor 刘洋陈育明
Owner FUDAN UNIV
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